SUB70N03-09BP

SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.009 @ VGS = 10 V 0.013 @ VGS = 4.5 V ID (A) 70a 60 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP70N03-09BP SUB70N03-09BP N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energya L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C ID IDM IAR EAR PD TJ, Tstg Symbol VDS VGS Limit 30 "20 70b 50 200 30 61 93b –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71229 S-20102—Rev. B, 11-Mar-02 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 1.6 Unit _C/W 1 http://www.Datasheet4U.com SUP/SUB70N03-09BP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0...