SUB70N03-09BP PWM Optimized Datasheet

SUB70N03-09BP Datasheet, PDF, Equivalent


Part Number

SUB70N03-09BP

Description

N-Channel MOSFET PWM Optimized

Manufacture

Vishay

Total Page 6 Pages
Datasheet
Download SUB70N03-09BP Datasheet


SUB70N03-09BP
New Product
SUP/SUB70N03-09BP
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.009 @ VGS = 10 V
30
0.013 @ VGS = 4.5 V
TO-220AB
ID (A)
70a
60
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP70N03-09BP
G DS
Top View
SUB70N03-09BP
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
30
"20
70b
50
200
30
61
93b
–55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)c
Free Air (TO-220AB)
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71229
S-20102—Rev. B, 11-Mar-02
Symbol
RthJA
RthJC
Limit
40
62.5
1.6
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
1
http://www.Datasheet4U.com

SUB70N03-09BP
SUP/SUB70N03-09BP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 24 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
30
0.8
70
20
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Gate Resistance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 5 V, ID = 70 A
VDD = 15 V, RL = 0.21 W
ID ] 70 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
IS
ISM
VSD IF = 70 A, VGS = 0 V
trr IF = 70 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Typ Max Unit
2.0
"100
1
50
150
0.007
0.010
45
0.009
0.0135
0.017
0.013
V
nA
mA
A
W
S
1500
530
240
15.5
5
6
10
8
25
9
2
19
18
15
45
16
pF
nC
ns
W
70
A
200
1.1 1.5 V
30 60 ns
www.vishay.com
2
Document Number: 71229
S-20102Rev. B, 11-Mar-02


Features SUP/SUB70N03-09BP New Product Vishay Si liconix N-Channel 30-V (D-S), 175_C, M OSFET PWM Optimized PRODUCT SUMMARY V(B R)DSS (V) 30 rDS(on) (W) 0.009 @ VGS = 10 V 0.013 @ VGS = 4.5 V ID (A) 70a 6 0 TO-220AB D TO-263 G DRAIN connect ed to TAB G G D S Top View SUP70N03-09B P SUB70N03-09BP N-Channel MOSFET D S T op View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Paramet er Drain-Source Voltage Gate-Source Vol tage Continuous Drain Current (TJ = 175 _C) Pulsed Drain Current Avalanche Curr ent Repetitive Avalanche Power Dissipat ion Operating Junction and Storage Temp erature Range Energya L = 0.1 mH TC = 2 5_C TC = 25_C TC = 100_C ID IDM IAR EAR PD TJ, Tstg Symbol VDS VGS Limit 30 "20 70b 50 200 30 61 93b –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c J unction-to-Ambient Junction-to-Case Not es: a. Duty cycle v 1%. b. See SOA curv e for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71229 S-20102.
Keywords SUB70N03-09BP, datasheet, pdf, Vishay, N-Channel, MOSFET, PWM, Optimized, UB70N03-09BP, B70N03-09BP, 70N03-09BP, SUB70N03-09B, SUB70N03-09, SUB70N03-0, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)