POWER MOSFET. AP25N10P-HF Datasheet


AP25N10P-HF MOSFET. Datasheet pdf. Equivalent


Part Number

AP25N10P-HF

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 4 Pages
Datasheet
Download AP25N10P-HF Datasheet


AP25N10P-HF
Advanced Power
Electronics Corp.
AP25N10GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
Description
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP25N10GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
100V
80mΩ
23A
G
D
S
TO-220(P)
G D S TO-263(S)
Rating
100
+20
23
14.6
80
96
0.77
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.3
40
62
Data & specifications subject to change without notice
Units
/W
/W
/W
1
200906033
http://www.Datasheet4U.com

AP25N10P-HF
AP25N10GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=16A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=16A
Drain-Source Leakage Current
VDS=100V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=80V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=16A
Gate-Source Charge
VDS=80V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=10V
VDD=50V
Rise Time
ID=16A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=3.125Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
100 -
- 0.14
--
2-
- 14
--
--
--
- 19
-5
-6
- 10
- 28
- 17
-2
- 1060
- 270
-8
- 1.5
Max.
-
-
80
4
-
25
250
+100
30
-
-
-
-
-
-
1700
-
-
2.3
Units
V
V/
m
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=16A, VGS=0V
IS=16A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 90 - ns
- 380 -
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features AP25N10GS/P-HF Halogen-Free Product Adv anced Power Electronics Corp. ▼ Low G ate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S N-CH ANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 80mΩ 23A Descr iption Advanced Power MOSFETs from APEC provide the designer with the best com bination of fast switching, ruggedized device design, low on-resistance and co st-effectiveness. The TO-263 package is widely preferred for all commercial-in dustrial surface mount applications and suited for low voltage applications su ch as DC/DC converters. The through-hol e version (AP25N10GP) are available for low-profile applications. G D S G D S TO-220(P) TO-263(S) Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Rat ings Symbol VDS VGS ID@TC=25℃ ID@TC=1 00℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Volta ge Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 23 14.6 8.
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