IPI80N06S2L-05 Power-Transistor Datasheet

IPI80N06S2L-05 Datasheet, PDF, Equivalent


Part Number

IPI80N06S2L-05

Description

Power-Transistor

Manufacture

Infineon Technologies

Total Page 8 Pages
Datasheet
Download IPI80N06S2L-05 Datasheet


IPI80N06S2L-05
OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2L-05
IPI80N06S2L-05, IPP80N06S2L-05
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
4.5 m
80 A
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N06S2L-05
IPP80N06S2L-05
IPI80N06S2L-05
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code Marking
SP0002-19004 2N06L05
SP0002-19000 2N06L05
SP0002-19002 2N06L05
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
Power dissipation
Operating and storage temperature
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
I D,pulse T C=25 °C
E AS I D= 80 A
V GS
P tot T C=25 °C
T j, T stg
Value
80
80
320
800
±20
300
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-13
http://www.Datasheet4U.com

IPI80N06S2L-05
IPB80N06S2L-05
IPI80N06S2L-05, IPP80N06S2L-05
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=55 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=80 A
-
-
-
1 100
1 100 nA
4.4 6 m
V GS=4.5 V, I D=80 A,
SMD version
-
4.1 5.7
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A,
-
3.6 4.8 m
V GS=10 V, I D=80 A,
SMD version
-
3.3 4.5
Rev. 1.0
page 2
2006-03-13


Features IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S 2L-05 OptiMOS® Power-Transistor Featu res • N-channel Logic Level - Enhance ment mode • Automotive AEC Q101 quali fied • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr een package (lead free) • Ultra low R ds(on) • 100% Avalanche tested PG-TO2 63-3-2 Product Summary V DS R DS(on),m ax (SMD version) ID 55 4.5 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80 N06S2L-05 IPP80N06S2L-05 IPI80N06S2L-05 Package PG-TO263-3-2 PG-TO220-3-1 PG- TO262-3-1 Ordering Code SP0002-19004 S P0002-19000 SP0002-19002 Marking 2N06L 05 2N06L05 2N06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) S ymbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drai n current2) Avalanche energy, single pu lse2) Gate source voltage4) Power dissi pation Operating and storage temperatur e I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 80 80 320 800 ±20 300 -55 ... +175 mJ V W °C Unit.
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