IRG7IC28UPBF TRENCH IGBT Datasheet

IRG7IC28UPBF Datasheet, PDF, Equivalent


Part Number

IRG7IC28UPBF

Description

PDP TRENCH IGBT

Manufacture

International Rectifier

Total Page 7 Pages
Datasheet
Download IRG7IC28UPBF Datasheet


IRG7IC28UPBF
PDP TRENCH IGBT
PD - 97562
IRG7IC28UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
600
cVCE(ON) typ. @ IC = 40A
IRP max @ TC= 25°C
TJ max
1.70
225
150
C
V
V
A
°C
G
CE
G
E
n-channel
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
dRθJC Junction-to-Case
dRθJA Junction-to-Ambient
Max.
±30
25
12
225
40
16
0.32
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
3.1
65
Units
V
A
W
W/°C
°C
N
Units
°C/W
www.irf.com
1
09/02/2010
http://www.Datasheet4U.com

IRG7IC28UPBF
IRG7IC28UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
V(BR)ECS
∆ΒVCES/TJ
VCE(on)
VGE(th)
Collector-to-Emitter Breakdown Voltage 600
eEmitter-to-Collector Breakdown Voltage 15
Breakdown Voltage Temp. Coefficient
–––
–––
–––
Static Collector-to-Emitter Voltage
Gate Threshold Voltage
–––
–––
–––
2.2
–––
–––
0.57
1.25
1.42
1.70
1.96
2.97
1.75
–––
–––
–––
–––
–––
–––
1.95
–––
–––
–––
4.7
V VGE = 0V, ICE = 1.0mA
V VGE = 0V, ICE = 1.0A
eV/°C Reference to 25°C, ICE = 1.0mA
VGE = 15V, ICE = 12A
eVGE = 15V, ICE = 24A
eV VGE = 15V, ICE = 40A
eVGE = 15V, ICE = 70A
eVGE = 15V, ICE = 160A
eVGE = 15V, ICE = 40A, TJ = 150°C
V VCE = VGE, ICE = 250µA
VGE(th)/TJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
tst
EPULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– -11 ––– mV/°C
––– 0.5 20
VCE = 600V, VGE = 0V
––– 30 ––– µA VCE = 600V, VGE = 0V, TJ = 100°C
––– 90
VCE = 600V, VGE = 0V, TJ = 125°C
––– 305 –––
VCE = 600V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
––– 55 ––– S VCE = 25V, ICE = 40A
e––– 70 ––– nC VCE = 400V, IC = 40A, VGE = 15V
––– 25 –––
––– 30 –––
––– 35 –––
––– 260 –––
IC = 40A, VCC = 400V
ns RG = 22, L=100µH
TJ = 25°C
––– 145 –––
––– 25 –––
––– 40 –––
––– 280 –––
––– 320 –––
IC = 40A, VCC = 400V
ns RG = 22, L=100µH
TJ = 150°C
100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1
––– 770 –––
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 930 –––
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class H1C (2000V)
(Per JEDEC standard JESD22-A114)
Class M4 (425V)
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
LC Internal Collector Inductance
––– 1880 –––
––– 75 –––
––– 45 –––
––– 4.5 –––
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
‚ Rθ is measured at TJ of approximately 90 °C.
ƒ Pulse width 400µs; duty cycle 2%.
2 www.irf.com


Features PD - 97562 PDP TRENCH IGBT Features l A dvanced Trench IGBT Technology l Optimi zed for Sustain and Energy Recovery cir cuits in PDP applications TM) l Low VCE (on) and Energy per Pulse (E PULSE for improved panel efficiency l High repeti tive peak current capability l Lead Fre e package IRG7IC28UPbF Key Parameters 600 1.70 225 150 V V A °C VCE min VCE (ON) typ. @ IC = 40A IRP max @ TC= 25° C TJ max c C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is speci fically designed for applications in Pl asma Display Panels. This device utiliz es advanced TM rating per silicon area which improve panel trench IGBT technol ogy to achieve low CE(on) V and low E P ULSE efficiency. Additional features ar e 150°C operating junction temperature and high repetitive peak current capab ility. These features combine to make t his IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 1.
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