MDF7N65B N-Channel MOSFET Datasheet

MDF7N65B Datasheet, PDF, Equivalent


Part Number

MDF7N65B

Description

N-Channel MOSFET

Manufacture

MagnaChip

Total Page 6 Pages
Datasheet
Download MDF7N65B Datasheet


MDF7N65B
MDF7N65B
N-Channel MOSFET 650V, 7.0A, 1.35
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 7.0A
RDS(ON) 1.35Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jun 2011 Version 2.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
650
±30
7.0*
4.4*
28*
42
0.33
13.1
4.5
212
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
3.01
Unit
oC/W
MagnaChip Semiconductor Ltd.
http://www.Datasheet4U.com

MDF7N65B
Ordering Information
Part Number
MDF7N65BTH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 3.5A
VDS = 30V, ID = 3.5A
VDS = 520V, ID = 7.0A, VGS =
10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 325V, ID = 7.0A,
RG = 25Ω(3)
IS = 7.0A, VGS = 0V
IF = 7.0A, dl/dt = 100A/μs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 7.0A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=8.0mH, IAS=7.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Min
650
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
1.15
8.5
18.4
4.5
6.7
786
4.1
85.4
13.6
32.6
57.6
38
7
-
280
4.3
Max Unit
-
4.0
1
100
1.35
-
V
μA
nA
Ω
S
-
- nC
-
-
- pF
-
-
-
ns
-
-
-A
1.4 V
- ns
- μC
Jun 2011 Version 2.2
2 MagnaChip Semiconductor Ltd.


Features MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω G eneral Description These N-channel MOSF ET are produced using advanced MagnaChi p’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. The se devices are suitable device for SMPS , high Speed switching and general purp ose applications. Features    VDS = 650V ID = 7.0A RDS(ON) ≤ 1.35 @ VGS = 10V @ VGS = 10V Applications    Power Supply PFC High Curr ent, High Speed Switching D G TO-220 F MDF Series S Absolute Maximum Rating s (Ta = 25oC) Characteristics Drain-Sou rce Voltage Gate-Source Voltage Continu ous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) (4) (1) Symbol VDSS VGSS TC=25oC TC=1 00 C o Rating 650 ±30 7.0* Unit V V A A A W W/ oC mJ V/ns mJ o ID IDM 4.4 * 28* 42 TC=25 C Derate above 25 oC o PD EAR dv/dt EAS TJ, Tstg 0.33 13.1 4.5 212 -55~150 Single Pulse Avalanche Ener.
Keywords MDF7N65B, datasheet, pdf, MagnaChip, N-Channel, MOSFET, DF7N65B, F7N65B, 7N65B, MDF7N65, MDF7N6, MDF7N, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)