FDS6679AZ PowerTrench MOSFET Datasheet

FDS6679AZ Datasheet, PDF, Equivalent


Part Number

FDS6679AZ

Description

P-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
Datasheet
Download FDS6679AZ Datasheet


FDS6679AZ
FDS6679AZ
P-Channel PowerTrench® MOSFET
-30V, -13A, 9m
March 2009
tm
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
„ Max rDS(on) = 9.3mat VGS = -10V, ID = -13A
„ Max rDS(on) = 14.8mat VGS = -4.5V, ID = -11A
„ Extended VGS range (-25V) for battery applications
„ HBM ESD protection level of 6kV typical (note 3)
„ High performance trench technology for extremely low
rDS(on)
„ High power and current handing capability
„ RoHS Compliant
DD
D
D
SO-8
S SSG
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
PD (Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Temperature
Ratings
-30
±25
-13
-65
2.5
1.2
1.0
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50 °C/W
25 °C/W
Package Marking and Ordering Information
Device Marking
FDS6679AZ
Device
FDS6679AZ
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
1
www.fairchildsemi.com
http://www.Datasheet4U.com

FDS6679AZ
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
ID = -250µA, referenced to
25°C
VDS = -24V, VGS=0V
VGS = ±25V, VDS=0V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
ID = -250µA, referenced to
25°C
VGS = -10V, ID = -13A
VGS = -4.5V, ID = -11A
VGS = -10V, ID = -13A,
TJ = 125°C
VDS = -5V, ID = -13A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain Charge
VDD = -15V, ID = -1A
VGS = -10V, RGS = 6
VDS = -15V, VGS = -10V,
ID = -13A
VDS = -15V, VGS = -5V,
ID = -13A
Drain-Source Diode Characteristic
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A
trr Reverse Recovery Time
IF = -13A, di/dt = 100A/µs
Qrr Reverse Recovery Charge
IF = -13A, di/dt = 100A/µs
Min Typ Max Units
-30 V
-20 mV/°C
-1 µA
±10 µA
-1 -1.9 -3
V
6.5 mV/°C
7.7 9.3
11.8 14.8 m
10.7 13.4
55 S
2890
500
495
3845
665
745
pF
pF
pF
13 24
15 27
210 336
92 148
68 96
38 54
10
17
ns
ns
ns
ns
nC
nC
nC
nC
-0.7 -1.2
40
-31
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b)105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when
mounted on a
minimun pad
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300µs, Duty Cycle <2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
2
www.fairchildsemi.com


Features FDS6679AZ P-Channel PowerTrench® MOSFET FDS6679AZ P-Channel PowerTrench® MOS FET -30V, -13A, 9mΩ General Descripti on This P-Channel MOSFET is producted u sing Fairchild Semiconductor’s advanc ed PowerTrench process that has been es pecially tailored to minimize the on-st ate resistance. This device is well sui ted for Power Management and load switc hing applications common in Notebook Co mputers and Portable Battery Packs. Ma rch 2009 tm Features „ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A „ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A „ Extended VGS range (-25V) for battery applications „ HBM ESD protec tion level of 6kV typical (note 3) „ H igh performance trench technology for e xtremely low rDS(on) „ High power and current handing capability „ RoHS Comp liant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and S torage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain.
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