SPA15N65C3
CoolMOSTM Power Transistor
Features • Low gate charge • Extreme dv/dt rated • High peak current capability •...
SPA15N65C3
CoolMOSTM Power
Transistor
Features Low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC
PG-TO220-3-31
Type SPA15N65C3
Package PG-TO220-3-31
Marking 15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) I D,pulse E AS E AR T C=25 °C I D=3 A, V DD=50 V I D=5 A, V DD=50 V Value 15 9.4 45 460 0.8 mJ Unit A
Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage
I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz)
5.0 50 ±20 ±30 34 -55 ... 150 M3 and M3.5 screws page 1 50
A V/ns V
Power dissipation Operating and storage temperature Mounting torque Rev. 2.0
P tot T j, T stg
T C=25 °C
W °C Ncm 2008-03-12
http://www.Datasheet4U.com
SPA15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Symbol Conditions IS I S,pulse T C=25 °C Value 15 45 Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in....