SPA15N65C3 Power Transistor Datasheet

SPA15N65C3 Datasheet, PDF, Equivalent


Part Number

SPA15N65C3

Description

Power Transistor

Manufacture

Infineon Technologies

Total Page 10 Pages
Datasheet
Download SPA15N65C3 Datasheet


SPA15N65C3
CoolMOSTM Power Transistor
Features
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
Q g,typ
SPA15N65C3
650 V
0.28
63 nC
PG-TO220-3-31
Type
SPA15N65C3
Package
Marking
PG-TO220-3-31 15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Symbol Conditions
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
E AS I D=3 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=5 A, V DD=50 V
Avalanche
current,
repetitive
t
3),4)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
dv /dt V DS=0...480 V
V GS
static
AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
Rev. 2.0
page 1
Value
15
9.4
45
460
0.8
5.0
50
±20
±30
34
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-03-12
http://www.Datasheet4U.com

SPA15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse current3)
Symbol Conditions
IS
I S,pulse
T C=25 °C
SPA15N65C3
Value
15
45
Unit
A
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
min.
Values
typ.
Unit
max.
- - 3.7 K/W
- - 62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th)
V DS=V GS,
I D=0.675 mA
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=9.4 A,
T j=25 °C
V GS=10 V, I D=9.4 A,
T j=150 °C
R G f =1 MHz, open drain
650
2.1
-
-2
-
-
-
-
-
3
0.5
5-
-
0.25
0.68
1.4
-V
3.9
25 µA
100 nA
0.28
-
-
Rev. 2.0
page 2
2008-03-12


Features SPA15N65C3 CoolMOSTM Power Transistor F eatures • Low gate charge • Extreme dv/dt rated • High peak current capa bility • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant Product S ummary V DS R DS(on),max Q g,typ 650 0. 28 63 V Ω nC PG-TO220-3-31 Type SPA 15N65C3 Package PG-TO220-3-31 Marking 15N65C3 Maximum ratings, at T j=25 ° C, unless otherwise specified Parameter Continuous drain current 2) Symbol Con ditions ID T C=25 °C T C=100 °C Pulse d drain current3) Avalanche energy, sin gle pulse Avalanche energy, repetitive t AR2),3) I D,pulse E AS E AR T C=25 ° C I D=3 A, V DD=50 V I D=5 A, V DD=50 V Value 15 9.4 45 460 0.8 mJ Unit A Ava lanche current, repetitive t AR3),4) MO SFET dv /dt ruggedness Gate source volt age I AR dv /dt V GS V DS=0...480 V st atic AC (f >1 Hz) 5.0 50 ±20 ±30 34 -55 ... 150 M3 and M3.5 screws page 1 5 0 A V/ns V Power dissipation Operatin g and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg T C=25 °C .
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