D1996

Transistor 2SD1996 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 s Features q q q q 0.65 max. 14.5±0.5 0.45–0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45–0.05 2.5±0.5 1 2 2.5±0.5 3 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 2.5±0.1 s Absolute Maximum Ratings 0.85 1.0 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (HW type) (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 *3R on Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0...