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N-CHANNEL MOSFET. W20NM60FD Datasheet

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N-CHANNEL MOSFET. W20NM60FD Datasheet






W20NM60FD MOSFET. Datasheet pdf. Equivalent




W20NM60FD MOSFET. Datasheet pdf. Equivalent





Part

W20NM60FD

Description

N-CHANNEL MOSFET



Feature


STP20NM60FD - STF20NM60D STW20NM60FD N-C HANNEL 600V - 0.26Ω - 20A TO-220/TO-2 20FP/TO-247 FDmesh™ POWER MOSFET (wit h FAST DIODE) TYPE STP20NM60FD STF20NM6 0D STW20NM60FD n n n n VDSS 600 V 600 V 600 V RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A Pw 192 W 45 W 214 W 3 1 2 n n TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAP ABILITIES 100% AVALANCHE TESTE.
Manufacture

ST Microelectronics

Datasheet
Download W20NM60FD Datasheet


ST Microelectronics W20NM60FD

W20NM60FD; D LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS TO-220 TO-220FP 3 2 1 TO-247 DESCR IPTION The FDmesh™ associates all adv antages of reduced on-resistance and fa st switching with an intrinsic fast-rec overy body diode. It is therefore stron gly recommended for bridge topologies, in particular ZVS ph.


ST Microelectronics W20NM60FD

ase-shift converters. INTERNAL SCHEMATI C DIAGRAM n APPLICATIONS ZVS PHASE-SH IFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATIO N SALES TYPE STP20NM60FD STF20NM60D STW 20NM60FD MARKING P20NM60FD F20NM60D W20 NM60FD PACKAGE TO-220 TO-220FP TO-247 P ACKAGING TUBE TUBE TUBE June 2003 1/1 1 http://www.Datasheet4U.com STP20NM6 0FD - STF20NM60D -.


ST Microelectronics W20NM60FD

STW20NM60FD ABSOLUTE MAXIMUM RATINGS Sy mbol VDS VDGR VGS ID ID IDM ( ) PTOT dv /dt (1) VISO Tj Tstg Parameter STP20NM6 0FD Value STF20NM60D STW20NM60FD Unit V V V 20 12.6 80 214 1.42 A A A W W/° C V/ns V °C °C Drain-source Voltage (VGS =0 ) Drain-gate Voltage (RGS =2 0 kΩ) Gate- source Voltage Drain Curren t (continuous) at TC = 25°C Drain Curr ent (continuous) at TC =.

Part

W20NM60FD

Description

N-CHANNEL MOSFET



Feature


STP20NM60FD - STF20NM60D STW20NM60FD N-C HANNEL 600V - 0.26Ω - 20A TO-220/TO-2 20FP/TO-247 FDmesh™ POWER MOSFET (wit h FAST DIODE) TYPE STP20NM60FD STF20NM6 0D STW20NM60FD n n n n VDSS 600 V 600 V 600 V RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A Pw 192 W 45 W 214 W 3 1 2 n n TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAP ABILITIES 100% AVALANCHE TESTE.
Manufacture

ST Microelectronics

Datasheet
Download W20NM60FD Datasheet




 W20NM60FD
STF20NM60D - STP20NM60FD
STW20NM60FD
N-channel 600V - 0.26- 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type
STF20NM60D
STP20NM60FD
STW20NM60FD
VDSS
600V
600V
600V
RDS(on)
<0.29
<0.29
<0.29
ID Pw
20A 192W
20A 45W
20A 214W
High dv/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistancE
Tight process control and high manufacturing
yields
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
Switching application
TO-247
3
2
1
TO-220FP
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STF20NM60D
STP20NM60FD
STW20NM60FD
Marking
F20NM60D
P20NM60FD
W20NM60FD
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
Tube
Tube
August 2006
Rev 4
1/15
www.st.com
15




 W20NM60FD
Contents
Contents
STF20NM60D - STP20NM60FD - STW20NM60FD
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15




 W20NM60FD
STF20NM60D - STP20NM60FD - STW20NM60FD
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20 k)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
VISO
Tj
Tstg
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering
purpose
TO-220
Value
TO-220FP TO-247
Unit
20
12.6
80
192
1.20
-
600
600
± 30
20 (1)
12.6 (1)
80 (1)
45
0.36
20
2500
– 65 to 150
V
V
V
20 A
12.6 A
80 A
214 W
1.42 W/°C
V/ns
-V
°C
°C
Value
TO-220 TO-220FP
0.65 2.8
62.5
TO-247
0.585
30
Unit
°C/W
°C/W
300 °C
Table 3. Avalanche data
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Value
10
700
Unit
A
mJ
3/15



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