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K1983-01 Dataheets PDF



Part Number K1983-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-channel MOS-FET
Datasheet K1983-01 DatasheetK1983-01 Datasheet (PDF)

2SK1983-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 4Ω 3A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pu.

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2SK1983-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 4Ω 3A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 3 12 ±30 60 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=1,5A VGS=10V ID=1,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=3A VGS=10V RGS=10 Ω Tch=25°C L = 100µH Min. 900 2,5 Typ. 3,0 10 0,2 10 2,5 4 1000 90 25 20 10 60 15 Max. 3,5 500 1,0 100 4,0 1500 135 40 30 15 90 25 3 12 1,47 2 3 IF=2xIDR V GS=0V T ch=25°C IF=IDR V GS=0V -dIF/dt=100A/µs Tch=25°C 0,98 400 2,5 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A A A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 2,08 Unit °C/W °C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com http://www.Datasheet4U.com N-channel MOS-FET 900V 4Ω 2SK1983-01 FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 3A 60W > Characteristics Typical Output Characteristics ↑ ID [A] 1 ↑ RDS(ON) [Ω] 2 ↑ ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(ON) [Ω] 4 ↑ gfs [S] 5 ↑ VGS(th) [V] 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode ↑ C [nF] 7 ↑ VDS [V] 8 ↑ VGS [V] ↑ IF [A] 9 VDS [V] → Qg [nC] → VSD [V] → Allowable Power Dissipation vs. TC Safe operation area ↑ Zth(ch-c) [K/W] Transient Thermal impedance ↑ PD [W] 10 ↑ ID [A] 12 11 Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice! .


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