SI2306

SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. Min. Max. Min. Max . A 2.70 3.10 G 1.90 REF . B 2.40 2.80 H 1.00 1.30 0.20 C 1.40 1.60 K 0.10 D 0.35 0.50 J 0.40 1.15 E 0 0.10 L 0.85 F 0.45 0.55 M 0° 10° Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter S Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Power Dissipation (Note 1) Operating and Storage Temperature Range ymbol VDSS VGSS ID 2.8 PD TJ, TSTG Ratings 20 ±12 Unit V A 350 -55 to +150 mW °C Note: 1. Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, for each single die. 1 JinYu semiconductor www.htsemi.com http://www.Datasheet4U.com Date:2011/05 SI2306 20V N-Channel Enhancement Mode MOSFET Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Sy Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage mbol V(BR)DSS IDSS IGSS Test Conditions VGS = 0V, ID = 250uA VDS = 20V, VGS = 0V -VGS = ±12V, VDS = 0V -- Min Typ Max 20 25 ---1 ±100 Unit V uA nA OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS(TH) RDS (ON) GFS VDS = VGS, ID = 250uA VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2A VDS =...