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2SB1012. B1012 Datasheet

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2SB1012. B1012 Datasheet






B1012 2SB1012. Datasheet pdf. Equivalent




B1012 2SB1012. Datasheet pdf. Equivalent





Part

B1012

Description

2SB1012



Feature


2SB1012(K) Silicon PNP Epitaxial Applic ation Low frequency power amplifier com plementary pair with 2SD1376(K) Outlin e TO-126 MOD 2 3 1. Emitter 2. Collec tor 3. Base ID 5 kΩ (Typ) 1 kΩ (Typ ) 1 1 2 3 http://www.Datasheet4U.co m 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base vol tage Collector to emitter voltage Emitt er to base voltage Coll.
Manufacture

Hitachi Semiconductor

Datasheet
Download B1012 Datasheet


Hitachi Semiconductor B1012

B1012; ector current Collector peak current Col lector power dissipation Junction tempe rature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(pea k) PC * Tj Tstg ID* 1 1 Rating –120 –120 –7 –1.5 –3.0 20 150 –55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25° C) Item Symbol Min –120 –7 — — 200.


Hitachi Semiconductor B1012

0 — — — — — — — Typ — — — — — — — — — 0.5 2 .0 Max — — –100 –10 30000 –1. 5 –2.0 –2.0 –2.5 3.0 — — V V V V V µs µs Unit V V µA µA Test con ditions I C = –10 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –1 A*1 I C = –1 A, IB = – 1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I C = –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I D = .


Hitachi Semiconductor B1012

1.5 A*1 I C = –1 A, IB1 = –IB2 = – 1 mA Collector to emitter breakdown V(B R)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR) EBO I CBO I CEO DC current transfer rat io Collector to emitter saturation volt age Base to emitter saturation voltage C to E diode forward voltage Turn on ti me Turn off time Note: 1. Pulse test hF E VCE(sat)1 VCE(sat)2 VB.

Part

B1012

Description

2SB1012



Feature


2SB1012(K) Silicon PNP Epitaxial Applic ation Low frequency power amplifier com plementary pair with 2SD1376(K) Outlin e TO-126 MOD 2 3 1. Emitter 2. Collec tor 3. Base ID 5 kΩ (Typ) 1 kΩ (Typ ) 1 1 2 3 http://www.Datasheet4U.co m 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base vol tage Collector to emitter voltage Emitt er to base voltage Coll.
Manufacture

Hitachi Semiconductor

Datasheet
Download B1012 Datasheet




 B1012
2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1376(K)
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
2
3
5 k
(Typ)
1 k
(Typ)
1
ID
http://www.Datasheet4U.com




 B1012
2SB1012(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID*1
Rating
–120
–120
–7
–1.5
–3.0
20
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
2000
Typ
0.5
2.0
Max Unit
—V
—V
–100 µA
–10 µA
30000
–1.5 V
–2.0 V
–2.0 V
–2.5 V
3.0 V
µs
µs
Test conditions
IC = –10 mA, RBE =
IE = –50 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE =
VCE = –3 V, IC = –1 A*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
IC = –1 A, IB = –1 mA*1
IC = –1.5 A, IB = –1.5 mA*1
ID = 1.5 A*1
IC = –1 A, IB1 = –IB2 = –1 mA
2




 B1012
Maximum Collector Dissipation Curve
30
20
10
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
–5
–4 TC = 25°C
Pulse
–7 mA –5 mA
–3
–3 mA
–1 mA
–2
–0.5 mA
–1 IB = –0.3 mA
0 –1– 2– 3– 4– 5
Collector to emitter Voltage VCE (V)
2SB1012(K)
–3
–1.0
Area of Safe Operation
iC (peak)
IC (max)
–0.3
–0.1
–0.03 Ta = 25°C
1 Shot pulse
–0.01
–0.003
–3
–10 –30
–100 –300
Collector to emitter Voltage VCE (V)
30,000
10,000
DC Current Transfer Ratio vs.
Collector Current
VCE = –3 V
3,000
1,000
300
100
Ta = 75°C
25°C
–25°C
Pulse Test
30
–0.03
–0.1 –0.3
–1.0
Collector current IC (A)
–3
3



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