PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect transistor
Rev. 01 — 20 August 2002 Product data
1. Descrip...
PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect
transistor
Rev. 01 — 20 August 2002 Product data
1. Description
N-channel, enhancement mode field-effect power
transistor.
PHP7NQ60E in TO-220AB (SOT78) PHX7NQ60E in isolated TO-220AB.
3. Applications
s s s s
4. Pinning information
Table 1: Pin 1 Description gate (g)
Simplified outline
mb
ww
Pinning - TO-220AB and isolated TO-220AB, simplified outline and symbol Symbol
mb
PD
2 3
F w C
drain (d) source (s)
r e .n a
MBK106
ua
DC to DC converters Switched mode power supplies Electronic lighting ballasts T.V. and computer monitor power supplies.
t e n
1 2 3
ce.
d g s
MBK110
mb (TO-220AB only)
mounting base, connected to drain (d)
1 2 3
TO-220AB (SOT78)
isolated TO-220AB
om
MBB076
http://www.Datasheet4U.com
s Very fast switching s Available in plastic and plastic full-pack package s Low thermal resistance.
8 c T
2. Features
ria
l
Product availability:
Philips Semiconductors
PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect
transistor
5. Quick reference data
Table 2: Symbol VDS ID Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) junction temperature drain-source on-state resistance VGS =1 0V ; ID = 3.5 A Tj =2 5 °C Tj = 150 °C Conditions 25 °C ≤ Tj ≤ 150 °C Tc =2 5 °C; VGS =1 0V
[1]
Typ -7 0.94
Max 600 150 1.2
Unit V A °C Ω Ω
6. Limiting values
Table 3: Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage (DC) drain-gate voltage (...
