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Rectifier Diode. 40EPS12PBF Datasheet

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Rectifier Diode. 40EPS12PBF Datasheet






40EPS12PBF Diode. Datasheet pdf. Equivalent




40EPS12PBF Diode. Datasheet pdf. Equivalent





Part

40EPS12PBF

Description

Input Rectifier Diode



Feature


40EPS..PbF High Voltage Series Vishay Hi gh Power Products Input Rectifier Diod e, 40 A DESCRIPTION/FEATURES Base catho de 2 The 40EPS..PbF rectifier High Vo ltage Series has been optimized for ver y low forward voltage drop, with modera te leakage. The glass passivation techn ology used has reliable operation up to 150 °C junction temperature. Pb-free Available RoHS* C.
Manufacture

Vishay

Datasheet
Download 40EPS12PBF Datasheet


Vishay 40EPS12PBF

40EPS12PBF; OMPLIANT TO-247AC modified 1 Cathode 3 Anode Typical applications are in in put rectification and these products ar e designed to be used with Vishay HPP S witches and output rectifiers which are available in identical package outline s. This product has been designed and q ualified for industrial level and lead (Pb)-free. PRODUCT SUMMARY VF at 40 A IFSM VRRM 1.1 V 47.


Vishay 40EPS12PBF

5 A 800/1200 V MAJOR RATINGS AND CHARAC TERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 40 A, TJ = 25 °C CHARACTERISTICS Sinu soidal waveform Range VALUES 40 800/120 0 475 1.1 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER 40EPS08Pb F 40EPS12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-R EPETITIVE PEAK REVERSE VOLTAGE V 900 13 00 IRRM AT 150 °C mA.


Vishay 40EPS12PBF

1 ABSOLUTE MAXIMUM RATINGS PARAMETER M aximum average forward current Maximum peak one cycle non-repetitive surge cur rent Maximum I2t for fusing Maximum I2 t for fusing SYMBOL IF(AV) IFSM I2t I 2 √ t TEST CONDITIONS TC = 105 °C, 1 80° conduction half sine wave 10 ms si ne pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM appli.

Part

40EPS12PBF

Description

Input Rectifier Diode



Feature


40EPS..PbF High Voltage Series Vishay Hi gh Power Products Input Rectifier Diod e, 40 A DESCRIPTION/FEATURES Base catho de 2 The 40EPS..PbF rectifier High Vo ltage Series has been optimized for ver y low forward voltage drop, with modera te leakage. The glass passivation techn ology used has reliable operation up to 150 °C junction temperature. Pb-free Available RoHS* C.
Manufacture

Vishay

Datasheet
Download 40EPS12PBF Datasheet




 40EPS12PBF
40EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
Base
cathode
2
TO-247AC modified
1
Cathode
3
Anode
PRODUCT SUMMARY
VF at 40 A
IFSM
VRRM
1.1 V
475 A
800/1200 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Sinusoidal waveform
Range
VF 40 A, TJ = 25 °C
TJ
DESCRIPTION/FEATURES
The 40EPS..PbF rectifier High Voltage Series has
been optimized for very low forward voltage drop, Pb-free
with moderate leakage. The glass passivation Available
technology
used
has
reliable
operation
up
to
RoHS*
COMPLIANT
150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
Switches and output rectifiers which are available in identical
package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free.
VALUES
40
800/1200
475
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
40EPS08PbF
40EPS12PbF
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
IRRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t 10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t t = 0.1 to 10 ms, no voltage reapplied
VALUES
40
400
475
800
1131
11 310
UNITS
A
A2s
A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94343
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1




 40EPS12PBF
40EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
Threshold voltage
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
40 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.0
1.1
7.16
0.74
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storrage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC modified (JEDEC)
VALUES
- 40 to 150
UNITS
°C
0.6
40 °C/W
0.2
6g
0.21 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
40EPS08
40EPS12
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94343
Revision: 06-Jun-08




 40EPS12PBF
40EPS..PbF High Voltage Series
Input Rectifier Diode, 40 A Vishay High Power Products
150
145
140
135
130
125
120
115
110
105
100
95
0
40EPS.. Series
RthJC (DC) = 0.6 K/W
Ø
Conduction angle
30° 60°
90°
120°
180°
5 10 15 20 25 30 35 40 45
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
40EPS.. Series
RthJC (DC) = 0.6 K/W
140
130 Ø
Conduction period
120
110
100
0
30°
60°
90°
120°
180°
DC
10 20 30 40 50 60
70
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
60
55
50
45
40
35
30
25
20
15
10
5
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
40EPS.. Series
TJ = 150 °C
5 10 15 20 25 30 35 40
VFM - Forward Voltage Drop (V)
Fig. 3 - Forward Power Loss Characteristics
80
DC
70 180°
120°
60 90°
60°
50 30°
RMS limit
40
30 Ø
Conduction period
20
40EPS.. Series
10 TJ = 150°C
0
0 10 20 30 40 50 60 70
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
1000
100
TJ = 25 °C
10 TJ = 150 °C
40EPS.. Series
1
0 0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous Forward Voltage (V)
Fig. 5 - Forward Voltage Drop Chacteristics
500
Maximum non-repetitive surge current
450 versus pulse train duration.
Initial TJ = 150 °C
400 No voltage reapplied
Rated VRRM reapplied
350
300
250
200
150 40EPS.. Series
100
0.01
0.1
1.0
Pulse Train Duration (S)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94343
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3



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