40EPS08PBF Diode Datasheet

40EPS08PBF Datasheet, PDF, Equivalent


Part Number

40EPS08PBF

Description

Input Rectifier Diode

Manufacture

Vishay

Total Page 6 Pages
Datasheet
Download 40EPS08PBF Datasheet


40EPS08PBF
40EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
Base
cathode
2
TO-247AC modified
1
Cathode
3
Anode
PRODUCT SUMMARY
VF at 40 A
IFSM
VRRM
1.1 V
475 A
800/1200 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Sinusoidal waveform
Range
VF 40 A, TJ = 25 °C
TJ
DESCRIPTION/FEATURES
The 40EPS..PbF rectifier High Voltage Series has
been optimized for very low forward voltage drop, Pb-free
with moderate leakage. The glass passivation Available
technology
used
has
reliable
operation
up
to
RoHS*
COMPLIANT
150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
Switches and output rectifiers which are available in identical
package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free.
VALUES
40
800/1200
475
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
40EPS08PbF
40EPS12PbF
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
IRRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t 10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t t = 0.1 to 10 ms, no voltage reapplied
VALUES
40
400
475
800
1131
11 310
UNITS
A
A2s
A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94343
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

40EPS08PBF
40EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
Threshold voltage
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
40 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.0
1.1
7.16
0.74
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storrage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC modified (JEDEC)
VALUES
- 40 to 150
UNITS
°C
0.6
40 °C/W
0.2
6g
0.21 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
40EPS08
40EPS12
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94343
Revision: 06-Jun-08


Features 40EPS..PbF High Voltage Series Vishay Hi gh Power Products Input Rectifier Diod e, 40 A DESCRIPTION/FEATURES Base catho de 2 The 40EPS..PbF rectifier High Vo ltage Series has been optimized for ver y low forward voltage drop, with modera te leakage. The glass passivation techn ology used has reliable operation up to 150 °C junction temperature. Pb-free Available RoHS* COMPLIANT TO-247AC m odified 1 Cathode 3 Anode Typical ap plications are in input rectification a nd these products are designed to be us ed with Vishay HPP Switches and output rectifiers which are available in ident ical package outlines. This product has been designed and qualified for indust rial level and lead (Pb)-free. PRODUCT SUMMARY VF at 40 A IFSM VRRM 1.1 V 475 A 800/1200 V MAJOR RATINGS AND CHARAC TERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 40 A, TJ = 25 °C CHARACTERISTICS Sinu soidal waveform Range VALUES 40 800/120 0 475 1.1 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER 40EPS08PbF 40EPS12PbF VRRM, MAXIMUM .
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