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N-Channel MOSFET. AOT9N70 Datasheet

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N-Channel MOSFET. AOT9N70 Datasheet






AOT9N70 MOSFET. Datasheet pdf. Equivalent




AOT9N70 MOSFET. Datasheet pdf. Equivalent





Part

AOT9N70

Description

9A N-Channel MOSFET



Feature


AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Chan nel MOSFET General Description Produc t Summary The AOT9N70 & AOTF9N70 & AOB 9N70 have been fabricated using an adva nced high voltage MOSFET process that i s designed to deliver high levels of pe rformance and robustness in popular AC- DC applications. By providing low RDS(o n), Ciss and Crss along with guaranteed avalanche capabil.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AOT9N70 Datasheet


Alpha & Omega Semiconductors AOT9N70

AOT9N70; ity these parts can be adopted quickly i nto new and existing offline power supp ly designs. VDS ID (at VGS=10V) RDS(ON ) (at VGS=10V) 100% UIS Tested 100% Rg Tested 800V@150℃ 9A < 1.2Ω TO-220 Top View TO-220F TO-263 D2PAK D D AOT9N70 S D G AOTF9N70 GDS G AOB9N7 0 S G S Orderable Part Number AOT9N7 0 AOTF9N70 AOTF9N70L AOB9N70L Package Type TO-220 Pb Free TO.


Alpha & Omega Semiconductors AOT9N70

-220F Pb Free TO-220F Green TO-263 Green Form Tube Tube Tube Tape & Reel Mini mum Order Quantity 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unles s otherwise noted Parameter Symbol AO T(B)9N70 Drain-Source Voltage VDS Ga te-Source Voltage Continuous Drain TC =25°C Current TC=100°C Pulsed Drai n Current C Avalanche Current C Repeti tive avalanche energy.


Alpha & Omega Semiconductors AOT9N70

C Single plused avalanche energy G Pe ak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt 9 5.8 TC=25°C Power D issipation B Derate above 25oC PD 236 1.8 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperatu re for soldering purpose, 1/8" from ca se for 5 seconds Thermal Characteristic s TL Parameter Maximum Junction-to-Am bient A,D Maximum C.

Part

AOT9N70

Description

9A N-Channel MOSFET



Feature


AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Chan nel MOSFET General Description Produc t Summary The AOT9N70 & AOTF9N70 & AOB 9N70 have been fabricated using an adva nced high voltage MOSFET process that i s designed to deliver high levels of pe rformance and robustness in popular AC- DC applications. By providing low RDS(o n), Ciss and Crss along with guaranteed avalanche capabil.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AOT9N70 Datasheet




 AOT9N70
AOT9N70/AOTF9N70/AOB9N70
700V, 9A N-Channel MOSFET
General Description
Product Summary
The AOT9N70 & AOTF9N70 & AOB9N70 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
800V@150
9A
< 1.2
TO-220
Top View
TO-220F
TO-263
D2PAK
D
D
AOT9N70
S
D
G
AOTF9N70
GDS
G
AOB9N70
S
G
S
Orderable Part Number
AOT9N70
AOTF9N70
AOTF9N70L
AOB9N70L
Package Type
TO-220 Pb Free
TO-220F Pb Free
TO-220F Green
TO-263 Green
Form
Tube
Tube
Tube
Tape & Reel
Minimum Order Quantity
1000
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)9N70
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
9
5.8
TC=25°C
Power Dissipation B Derate above 25oC
PD
236
1.8
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT(B)9N70
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.53
AOTF9N70
700
±30
9*
5.8*
33
3.2
77
154
5
50
0.4
-55 to 150
AOTF9N70L
9*
5.8*
27.8
0.22
300
AOTF9N70
65
--
2.5
AOTF9N70L
65
--
4.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.3.0: January 2015
www.aosmd.com
Page 1 of 6




 AOT9N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=4.5A
VDS=40V, ID=4.5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=560V, ID=9A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=350V, ID=9A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=9A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
700
800
V
0.84
V/ oC
1
µA
10
±100 nΑ
3 3.9 4.5 V
0.94 1.2
10 S
0.74 1
V
9A
33 A
1085
90
6
2
1357
113
7.4
4
1630
147
11
6
pF
pF
pF
23 28.5 35
5.5 6.8 8.2
9.3 11.6 18
35
61
76
48
300 375 450
6 7.5 9
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=3.2A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: January 2015
www.aosmd.com
Page 2 of 6




 AOT9N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
10V
15
6.5V
12
9 6V
6
3
VGS=5.5V
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
3.0
2.5
2.0
1.5 VGS=10V
1.0
0.5
0.0
0 4 8 12 16 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
100
VDS=40V
-55°C
10
125°C
1
25°C
0.1
2
3
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
2.5 VGS=10V
ID=4.5A
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
0.9
0.8
-100 -50 0 50 100 150 200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.3.0: January 2015
www.aosmd.com
Page 3 of 6



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