9A N-Channel MOSFET
AOT9N70/AOTF9N70/AOB9N70
700V, 9A N-Channel MOSFET
General Description
Product Summary
The AOT9N70 & AOTF9N70 & AOB9N...
Description
AOT9N70/AOTF9N70/AOB9N70
700V, 9A N-Channel MOSFET
General Description
Product Summary
The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
800V@150℃ 9A < 1.2Ω
TO-220
Top View TO-220F
TO-263 D2PAK
D
D
AOT9N70
S D G
AOTF9N70
GDS
G AOB9N70
S
G S
Orderable Part Number
AOT9N70 AOTF9N70 AOTF9N70L AOB9N70L
Package Type
TO-220 Pb Free TO-220F Pb Free TO-220F Green
TO-263 Green
Form
Tube Tube Tube Tape & Reel
Minimum Order Quantity
1000 1000 1000 800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)9N70
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
9 5.8
TC=25°C Power Dissipation B Derate above 25oC
PD
236 1.8
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds Thermal Characteristics
TL
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbo...
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