P1806

N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W ID 50 A TYPICAL RDS(on) = 0.015 W EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ■ TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STP1806 MARKING P1806 PACKAGE TO-220 PACKAGING TUBE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(œ) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 50 35 200 110 0.73 7 350 -55 to 175 (2) Starting T j = 25 oC, ID = 25A, VDD = 30V (1) ISD ˆ50A, di/dt ˆ400A/µs, VDD ˆ V(BR)DSS, Tj ˆ TJMAX Unit V V V A A A W W/°C V/ns mJ °C (œ) Pulse width limited by safe operating area. November 2004 Rev.0.1 1/9 S...