P3004ND5G

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P3004ND5G TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY S2 G2 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 30mΩ 55mΩ ID 12A -8.8A G1 D1/D2 D1 G2 D2 S1 S2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 1 SYMBOL VDS VGS N-Channel P-Channel UNITS 40 ±20 12 8 50 19 20 3 2.1 -55 to 150 275 °C -40 ±20 -8.8 -5.8 -50 -18 19 mJ W A V V TC = 25 °C TC = 70 °C ID IDM IAS L = 0.1mH TC = 25 °C TC = 70 °C EAS PD Tj, Tstg TL SYMBOL RJC RJA TYPICAL MAXIMUM 6 42 S1G1 UNITS °C / W °C / W Pulse width limited by maximum junction temperature. Duty cycle  1% ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250A Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A VDS = VGS, ID = 250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A N-Ch P-Ch N-Ch 40 -40 1.7 2.0 -2.0 3.0 -3.0 V MIN TYP MAX UNIT P-Ch -1.7 REV 1.0 1 Oct-21-2009 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P3004ND5G TO-252-5 Halogen-Free & Lead...