Document
SUP85N03-3m6P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0036 at VGS = 10 V 0.0044 at VGS = 4.5 V ID (A) 85d 85d Qg (Typ.) 67
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-220AB
• Power Supply - Secondary Synchronous Rectification • DC/DC Converter
D
G
G D S Top View Ordering Information: SUP85N03-3m6P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Avalanche Energy
a
Symbol VDS VGS TC = 25 °C TC = 70 °C ID IDM IAS L = 0.1 mH TC = 25 °C TA = 25 °Cc EAS PD TJ, Tstg
Limit 30 ± 20 85d 85d 120 45 101 78.1 3.1 - 55 to 150
b
Unit V
A
mJ W °C
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited.
c
Symbol RthJA RthJC
Limit 40 1.6
Unit °C/W
Document Number: 65536 S09-2271-Rev. A, 02-Nov-09
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SUP85N03-3m6P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec
c c
Symbol VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf
Test Conditions VDS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125 °C VDS = 30 V, VGS = 0 V, TJ = 150 °C VDS ≥ 10 V, VGS = 10 V VGS = 10 V, ID = 22 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A
Min. 30 1
Typ.
Max.
Unit
2.5 ± 250 1 50 250
V nA µA A
50 0.0030 0.0036 110 0.0036 0.0044
Ω S
3535 VGS = 0 V, VDS = 15 V, f = 1 MHz 680 400 67 VDS = 15 V, VGS = 10 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
b
pF 100 nC 2.8 20 20 53 20 ns Ω
10.5 12.2 0.3 1.4 11 10 35 10
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr
85 120 IF = 10 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/µs 0.83 41 2 40 1.5 62 3 60
A V ns A nC
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operat.