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APM4820K Dataheets PDF



Part Number APM4820K
Manufacturers Anpec Electronics Coropration
Logo Anpec Electronics Coropration
Description N-Channel MOSFET
Datasheet APM4820K DatasheetAPM4820K Datasheet (PDF)

APM4820K N-Channel Enhancement Mode MOSFET Features • 30V/11A, RDS(ON) =12mΩ(Typ.) @ VGS = 10V RDS(ON) =18mΩ(Typ.) @ VGS = 4.5V Pin Description D D D D S S S G • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) SOP-8 (5,6,7,8) DD D D Applications (4) G • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S S S ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information APM4820 Assembly Materi.

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APM4820K N-Channel Enhancement Mode MOSFET Features • 30V/11A, RDS(ON) =12mΩ(Typ.) @ VGS = 10V RDS(ON) =18mΩ(Typ.) @ VGS = 4.5V Pin Description D D D D S S S G • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) SOP-8 (5,6,7,8) DD D D Applications (4) G • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S S S ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information APM4820 Assembly Material Handling Code Temperature Range Package Code APM4820 XXXXX Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code APM4820 K : Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.4 - May., 2009 1 www.anpec.com.tw Downloaded from Elcodis.com electronic components distributor APM4820K Absolute Maximum Ratings Symbol VDSS VGSS IDa IDM IS IAR a (TA = 25°C Unless Otherwise Noted) Rating 30 ±20 TA=25 C TA=70 C o o Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS=10V) 300µs Pulsed Drain Current (VGS=10V) Diode Continuous Forward Current Avalanche Current Repetitive Avalanche Energy (L=0.3mH) Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Lead 2 Unit V 11 9 40 2.5 16.5 40 150 -55 to 150 mJ °C W A a b b EAR TJ TSTG PDa RθJAa,c RθJL TA=25°C TA=70°C t ≤ 10s Steady State o 2.5 1.6 50 25 °C/W Note a¡G Surface Mounted on 1in pad area, t ≤ 10sec. Note b¡G UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). Note c¡G Maximum under Steady State conditions is 75 °C/W. o Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) d (TA = 25°C Unless Otherwise Noted) Parameter Test Conditions APM4820 Min. 30 1.3 Typ. 1.8 12 18 0.75 20 11 Max. 1 30 2.5 ±100 15 25 1.1 - Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-State Resistance VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=11A VGS=4.5V, IDS=10A ISD=2.5A, VGS=0V ISD=11A, dlSD/dt=100A/µs V µA V nA mΩ Diode Characteristics VSD trr e e d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge V ns nC Qrr Copyright © ANPEC Electronics Corp. Rev. A.4 - May., 2009 2 www.anpec.com.tw Downloaded from Elcodis.com electronic components distributor APM4820K Electrical Characteristics (Cont.) Symbol Parameter e (TA = 25°C Unless Otherwise Noted) APM4820 Min. 0.8 Typ. 1.8 990 130 90 10 11 28 5 19 2.5 4.5 Max. 2.8 19 21 51 10 27 nC ns pF Test Conditions Unit Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time e VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Ω Gate Charge Characteristics Total Gate Charge VDS=15V, VGS=10V, IDS=11A - Gate-Source Charge Gate-Drain Charge Note d : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. A.4 - May., 2009 3 www.anpec.com.tw Downloaded from Elcodis.com electronic components distributor APM4820K Typical Operating Characteristics Power Dissipation 3.0 Drain Current 12 2.5 10 1.5 ID - Drain Current (A) TA=25 C 0 20 40 60 80 100 120 140 160 o 2.0 8 Ptot - Power (W) 6 1.0 4 0.5 2 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o 0.0 0 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 Thermal Transient Impedance 2 1 ID - Drain Current (A) 10 Rd s(o n) Lim it Duty = 0.5 0.2 0.1 0.05 300µs 1ms 1 10ms 100ms 0.1 0.02 0.1 1s DC 0.01 Mounted on 1in pad o RθJA : 50 C/W 2 0.01 0.01 TA=25 C o Single Pulse 0.1 1 10 100 0.01 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) C.


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