Document
APM4820K
N-Channel Enhancement Mode MOSFET
Features
•
30V/11A, RDS(ON) =12mΩ(Typ.) @ VGS = 10V RDS(ON) =18mΩ(Typ.) @ VGS = 4.5V
Pin Description
D D D D S S S G
• Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
SOP-8
(5,6,7,8) DD D D
Applications
(4) G
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems.
S S S ( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
APM4820 Assembly Material Handling Code Temperature Range Package Code APM4820 XXXXX Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code
APM4820 K :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.4 - May., 2009 1 www.anpec.com.tw
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APM4820K
Absolute Maximum Ratings
Symbol VDSS VGSS IDa IDM IS IAR
a
(TA = 25°C Unless Otherwise Noted)
Rating 30 ±20 TA=25 C TA=70 C
o o
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS=10V) 300µs Pulsed Drain Current (VGS=10V) Diode Continuous Forward Current Avalanche Current Repetitive Avalanche Energy (L=0.3mH) Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Lead
2
Unit V
11 9 40 2.5 16.5 40 150 -55 to 150 mJ °C W A
a b b
EAR TJ
TSTG PDa RθJAa,c RθJL
TA=25°C TA=70°C t ≤ 10s
Steady State
o
2.5 1.6 50 25
°C/W
Note a¡G Surface Mounted on 1in pad area, t ≤ 10sec. Note b¡G UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). Note c¡G Maximum under Steady State conditions is 75 °C/W.
o
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
d
(TA = 25°C Unless Otherwise Noted)
Parameter
Test Conditions
APM4820 Min. 30 1.3 Typ. 1.8 12 18 0.75 20 11 Max. 1 30 2.5 ±100 15 25 1.1 -
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-State Resistance
VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=11A VGS=4.5V, IDS=10A ISD=2.5A, VGS=0V ISD=11A, dlSD/dt=100A/µs
V µA V nA mΩ
Diode Characteristics VSD
trr
e e d
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
V ns nC
Qrr
Copyright © ANPEC Electronics Corp. Rev. A.4 - May., 2009
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APM4820K
Electrical Characteristics (Cont.)
Symbol Parameter
e
(TA = 25°C Unless Otherwise Noted) APM4820 Min. 0.8 Typ. 1.8 990 130 90 10 11 28 5 19 2.5 4.5 Max. 2.8 19 21 51 10 27 nC ns pF
Test Conditions
Unit
Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd
Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
e
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
Ω
Gate Charge Characteristics Total Gate Charge
VDS=15V, VGS=10V, IDS=11A -
Gate-Source Charge Gate-Drain Charge
Note d : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e : Guaranteed by design, not subject to production testing.
Copyright © ANPEC Electronics Corp. Rev. A.4 - May., 2009
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APM4820K
Typical Operating Characteristics
Power Dissipation
3.0
Drain Current
12
2.5
10
1.5
ID - Drain Current (A)
TA=25 C 0 20 40 60 80 100 120 140 160
o
2.0
8
Ptot - Power (W)
6
1.0
4
0.5
2 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
o
0.0
0
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
Thermal Transient Impedance
2 1
ID - Drain Current (A)
10
Rd s(o n) Lim it
Duty = 0.5
0.2 0.1 0.05
300µs 1ms
1
10ms 100ms
0.1
0.02
0.1
1s DC
0.01 Mounted on 1in pad o RθJA : 50 C/W
2
0.01 0.01
TA=25 C
o
Single Pulse
0.1
1
10
100
0.01 1E-4
1E-3
0.01
0.1
1
10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
C.