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N-Channel JFET. SSTJ211 Datasheet

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N-Channel JFET. SSTJ211 Datasheet






SSTJ211 JFET. Datasheet pdf. Equivalent




SSTJ211 JFET. Datasheet pdf. Equivalent





Part

SSTJ211

Description

N-Channel JFET



Feature


N-Channel JFET CORPORATION J210 – J21 2 / SSTJ210 – SSTJ212 FEATURES DESCRI PTION The J210 Series is an N-Channel J FET single device encapsulated in a TO- 92 plastic package well suited for auto mated assembly. The device features low leakage, typically under 2 pA, low noi se, under 10 nano volts per square hert z at 10 hertz and high gain. This serie s is excellent for mix.
Manufacture

Calogic LLC

Datasheet
Download SSTJ211 Datasheet


Calogic LLC SSTJ211

SSTJ211; er, oscillators and amplifier applicatio ns. ORDERING INFORMATION Part J210-11 S STJ210-11 Package Plastic TO-92 Package Plastic SOT-23 Temperature Range -55oC to +135oC -55oC to +135oC • Low Noi se • Low Leakage • High Power Gain Purpose Amplifiers • General • VHF/ UHF Amplifiers • Mixers • Oscillato rs APPLICATIONS PIN CONFIGURATION SO T-23 G TO-92 D S G D S PRODUC.


Calogic LLC SSTJ211

T MARKING (SOT-23) CJ1 1 DRAIN 2 SOURCE 3 GATE 3 2 1 SSTJ210 SSTJ211 SSTJ212 Z10 Z11 Z12 BOTTOM VIEW J210 – J2 12 / SSTJ210 – SSTJ212 CORPORATION A BSOLUTE MAXIMUM RATINGS (TA = 25oC unle ss otherwise noted) Parameter/Test Cond ition Gate-Drain Voltage Gate-Source Vo ltage Gate Current Power Dissipation Po wer Derating Operating Junction Tempera ture Storage Temperatu.


Calogic LLC SSTJ211

re Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD TJ Ts tg TL Limit -25 -25 10 360 3.27 -55 to 135 -55 to 150 300 Unit V V mA mW mW/ o C o C o C o C ELECTRICAL CHARACTERISTI CS (TA = 25oC unless otherwise noted) S YMBOL CHARACTERISTCS TYP1 210 MIN STATI C V(BR)GSS Gate-Source Breakdown Voltag e VGS(OFF ) Gate-Source Cut off Voltage IDSS IGSS IG ID(O.

Part

SSTJ211

Description

N-Channel JFET



Feature


N-Channel JFET CORPORATION J210 – J21 2 / SSTJ210 – SSTJ212 FEATURES DESCRI PTION The J210 Series is an N-Channel J FET single device encapsulated in a TO- 92 plastic package well suited for auto mated assembly. The device features low leakage, typically under 2 pA, low noi se, under 10 nano volts per square hert z at 10 hertz and high gain. This serie s is excellent for mix.
Manufacture

Calogic LLC

Datasheet
Download SSTJ211 Datasheet




 SSTJ211
N-Channel JFET
CORPORATION
J210 – J212 / SSTJ210 – SSTJ212
FEATURES
Low Noise
Low Leakage
•• High Power Gain
APPLICATIONS
General Purpose Amplifiers
VHF/UHF Amplifiers
Mixers
•• Oscillators
PIN CONFIGURATION
TO-92
CJ1
DSG
1 DRAIN
2 SOURCE
3 GATE
3
2
1
BOTTOM VIEW
DESCRIPTION
The J210 Series is an N-Channel JFET single device
encapsulated in a TO-92 plastic package well suited for
automated assembly. The device features low leakage,
typically under 2 pA, low noise, under 10 nano volts per
square hertz at 10 hertz and high gain. This series is
excellent for mixer, oscillators and amplifier applications.
ORDERING INFORMATION
Part
J210-11
SSTJ210-11
Package
Plastic TO-92 Package
Plastic SOT-23
Temperature Range
-55oC to +135oC
-55oC to +135oC
SOT-23
G
D
S
PRODUCT MARKING (SOT-23)
SSTJ210
Z10
SSTJ211
Z11
SSTJ212
Z12




 SSTJ211
CORPORATION
J210 – J212 / SSTJ210 – SSTJ212
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Condition
Symbol
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Power Dissipation
Power Derating
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGD
VGS
IG
PD
TJ
Tstg
TL
Limit
-25
-25
10
360
3.27
-55 to 135
-55 to 150
300
Unit
V
V
mA
mW
mW/ oC
oC
oC
oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
SYMBOL
CHARACTERISTCS
TYP1
210 211 212
MIN MAX MIN MAX MIN MAX
UNIT
TEST CONDITIONS
STATIC
V(BR)GSS Gate-Source Breakdown Voltage
VGS(OFF) Gate-Source Cut off Voltage
IDSS Saturation Drain Current 2
-35 -25 -25 -25
-1 -3 -2.5 -4.5 -4 -6
2 15 7 20 15 40
IG = -1µA, VDS = 0V
V
VDS = 15V, ID = 1nA
mA VDS = 15V, VGS = 0V
IGSS Gate Reverse Current
-1
-100
-100
-100 pA VGS = -15V, VDS = 0V
-0.5 nA TA = 125oC
IG Gate Operating Current
-1
pA VDG = 10V, ID = 1mA
ID(OFF) Drain Cutoff Current
1
pA VDS = 10V, VGS = -8V
VGS(F) Gate-Source Forward Voltage
0.7
V IG = 1mA, VDS = 0V
DYNAMIC
gfs
Common-Source Forward
Transconductance
gos
Common-Source Output
Conductance
4 12 6 12 7
12
150 200
200
mS
VDS = 15V, VGS = 0V
f = 1kHz
µS
Ciss Common-Source Input Capacitance
Crss
Common-Source Reverse
Transfer Capacitance
4
1.5
pF
VDS = 15V, VGS = 0V
f = 1MHz
en Equivalent Input Noise Voltage
5
nV/ Hz
VDS = 15V, VGS = 0V
f = 1kHz
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle 3%.







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