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PURPOSE AMPLIFIER. SSTJ211 Datasheet

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PURPOSE AMPLIFIER. SSTJ211 Datasheet






SSTJ211 AMPLIFIER. Datasheet pdf. Equivalent




SSTJ211 AMPLIFIER. Datasheet pdf. Equivalent





Part

SSTJ211

Description

LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER



Feature


J210, J211, J212 SSTJ210, SSTJ211, SSTJ2 12 LOW NOISE N-CHANNEL JFET GENERAL PUR POSE AMPLIFIER FEATURES HIGH GAIN gfs= 7000µmho MINIMUM (J211, J212) IGSS= 10 0pA MAXIMUM G TO-92 TO-92 D Plastic HIGH INPUT IMPEDENCE LOW CAPACITANCE C ISS= 5pF TYPICAL ABSOLUTE MAXIMUM RATI NGS @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage Gate Current Total Device.
Manufacture

Linear Integrated Systems

Datasheet
Download SSTJ211 Datasheet


Linear Integrated Systems SSTJ211

SSTJ211; Dissipation @25°C Ambient (Derate 3.27 mW/°C) Operating Temperature Range -2 5V 10mA 360mW -55 to +150 °C S G D S TO-92 TOP VIEW J210, J211, J212 SOT- 23 TOP VIEW SSTJ210, SSTJ211, SSTJ212 ELECTRICAL CHARACTERISTICS @ 25 °C (un less otherwise stated) SYMBOL CHARACTER ISTICS SSTJ210 SSTJ211 SSTJ212 UNITS MI N TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current -.


Linear Integrated Systems SSTJ211

-- -100 --- -100 --- -100 pA VGS(off) BV GSS IDSS IG gfs gos CISS Crss en Gate-S ource Cutoff Voltage Gate-Source Breakd own Voltage Drain Saturation Current Ga te Current Common-Source Forward Transc onductance Common-Source Output Conduct ance Common-Source Input Capacitance Co mmon-Source Reverse Transfer Capacitanc e Equivalent Short-Circuit Input Noise Voltage -1 -25 2 -.


Linear Integrated Systems SSTJ211

4,000 ------10 --4 1 10 -3 -15 --2.5 -25 7 -----10 --4 1 10 -4.5 -20 --4 -25 15 -----10 --4 1 10 -6 -40 -12,000 µmho 150 -------200 -------200 -pF --nV√Hz V mA pA CONDITIONS VDS = 0, VGS = -15 V (NOTE 1) VDS = 15V, ID = 1nA VDS = 0, IG = -1µA VDS = 15V, VGS=0 (NOTE 2) V DS = 10V, ID=1mA (NOTE 1) f=1kHz 12,00 0 6,000 12,000 7,000 VDS = 15V, VGS=0 f=1MHz f=1kHz NOTE.

Part

SSTJ211

Description

LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER



Feature


J210, J211, J212 SSTJ210, SSTJ211, SSTJ2 12 LOW NOISE N-CHANNEL JFET GENERAL PUR POSE AMPLIFIER FEATURES HIGH GAIN gfs= 7000µmho MINIMUM (J211, J212) IGSS= 10 0pA MAXIMUM G TO-92 TO-92 D Plastic HIGH INPUT IMPEDENCE LOW CAPACITANCE C ISS= 5pF TYPICAL ABSOLUTE MAXIMUM RATI NGS @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage Gate Current Total Device.
Manufacture

Linear Integrated Systems

Datasheet
Download SSTJ211 Datasheet




 SSTJ211
J210, J211, J212
SSTJ210, SSTJ211, SSTJ212
LOW NOISE N-CHANNEL JFET
GENERAL PURPOSE AMPLIFIER
FEATURES
HIGH GAIN gfs=7000µmho MINIMUM (J211, J212)
HIGH INPUT IMPEDENCE IGSS= 100pA MAXIMUM
LOW CAPACITANCE CISS= 5pF TYPICAL
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Gate-Drain or Gate-Source Voltage
-25V
Gate Current
Total Device Dissipation @25°C Ambient
(Derate 3.27 mW/°C)
10mA
360mW
Operating Temperature Range
-55 to +150 °C
TTOO--9922
D
G
S
TO-92
TOP VIEW
J210, J211, J212
Plastic
DSG
SOT-23
TOP VIEW
SSTJ210, SSTJ211, SSTJ212
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTICS
SSTJ210
SSTJ211
SSTJ212 UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS Gate Reverse Current
-- -- -100 -- -- -100 -- -- -100 pA
VGS(off) Gate-Source Cutoff Voltage
-1 -- -3 -2.5 -- -4.5 -4 -- -6
BVGSS Gate-Source Breakdown Voltage -25 -- -- -25 -- -- -25 -- --
V
IDSS Drain Saturation Current
2 -- 15 7 -- 20 15 -- 40 mA
IG Gate Current
-- -10 -- -- -10 -- -- -10 -- pA
gfs
Common-Source Forward
Transconductance
gos
Common-Source Output
Conductance
CISS
Common-Source Input
Capacitance
Crss
Common-Source Reverse
Transfer Capacitance
4,000 -- 12,000 6,000 -- 12,000 7,000 -- 12,000
µmho
-- -- 150 -- -- 200 -- -- 200
-- 4 -- -- 4
- 1 -- -- 1
-- -- 4 --
-- -- 1 --
pF
en
Equivalent Short-Circuit Input
Noise Voltage
- 10 -- -- 10 -- -- 10 -- nV√Hz
CONDITIONS
VDS = 0, VGS = -15V (NOTE 1)
VDS = 15V, ID = 1nA
VDS = 0, IG = -1µA
VDS = 15V, VGS=0 (NOTE 2)
VDS = 10V, ID=1mA (NOTE 1)
f=1kHz
VDS = 15V, VGS=0 f=1MHz
f=1kHz
NOTE
1. Approximately doubles for every 10°C increase in TA.
2. Pulse test duration = 2ms.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201113 5/20/2014 Rev A7 ECN# JS210_211_212











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