SSTJ211

J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM (J211, J212) IGSS= 100pA MAXIMUM G TO-92 TO-92 D Plastic HIGH INPUT IMPEDENCE LOW CAPACITANCE CISS= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation @25°C Ambient (Derate 3.27 mW/°C) Operating Temperature Range -25V 10mA 360mW -55 to +150 °C S G D S TO-92 TOP VIEW J210, J211, J212 SOT-23 TOP VIEW SSTJ210, SSTJ211, SSTJ212 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTICS SSTJ210 SSTJ211 SSTJ212 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current --- -100 --- -100 --- -100 pA VGS(off) BVGSS IDSS IG gfs gos CISS Crss en Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage Drain Saturation Current Gate Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Short-Circuit Input Noise Voltage -1 -25 2 -4,000 ------10 --4 1 10 -3 -15 --2.5 -25 7 -----10 --4 1 10 -4.5 -20 --4 -25 15 -----10 --4 1 10 -6 -40 -12,000 µmho 150 -------200 -------200 -pF --nV√Hz V mA pA CONDITIONS VDS = 0, VGS = -15V (NOTE 1) VDS = 15V, ID = 1nA VDS = 0, IG = -1µA VDS = 15V, VGS=0 (NOTE 2) VDS = 10V, ID=1mA (NOTE 1) f=1kHz 12,000 6,000 12,000 7,000 VDS = 15V, VGS=0 f=1MHz f=1kHz NOTE 1. Approximately do...