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Barrier Diodes. HSMS-2864 Datasheet

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Barrier Diodes. HSMS-2864 Datasheet






HSMS-2864 Diodes. Datasheet pdf. Equivalent




HSMS-2864 Diodes. Datasheet pdf. Equivalent





Part

HSMS-2864

Description

Surface Mount RF Schottky Barrier Diodes



Feature


Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Featu res • Surface Mount SOT-23/SOT143 Pac kage • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure i n Time) Rate* • Six-sigma Quality Lev el • Single, Dual and Quad Versions Tape and Reel Options Available * Fo r more information see the Surface Moun t Schottky Reliability Data Sh.
Manufacture

HP

Datasheet
Download HSMS-2864 Datasheet


HP HSMS-2864

HSMS-2864; eet. Package Lead Code Identification T OP VIEW SINGLE 3 SERIES 3 COMMON ANODE 3 COMMON CATHODE 3 1 #0 2 1 #2 2 1 #3 2 1 #4 2 UNCONNECTED PAIR 3 4 RING QUAD 3 4 BRIDGE QUAD 3 4 CRO SS-OVER QUAD 3 4 1 #5 2 1 #7 2 1 #8 2 1 #9 2 Description/Applicat ions These Schottky diodes are specific ally designed for both analog and digit al applications. T.


HP HSMS-2864

his series offers a wide range of specif ications and package configurations to give the designer wide flexibility. Typ ical applications of these Schottky dio des are mixing, detecting, switching, s ampling, clamping, and wave shaping. Th e HSMS-2800 series of diodes is optimiz ed for high voltage applications. The H SMS-2810 series of diodes features very low flicker (1/f).


HP HSMS-2864

noise. The HSMS-2820 series of diodes i s the best all-around choice for most a pplications, featuring low series resis tance, low forward voltage at all curre nt levels and good RF characteristics. The HSMS-2860 series is a high performa nce diode offering superior Vf and ultr a-low capacitance. Note that HP’s man ufacturing techniques assure that dice found in pairs and q.

Part

HSMS-2864

Description

Surface Mount RF Schottky Barrier Diodes



Feature


Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Featu res • Surface Mount SOT-23/SOT143 Pac kage • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure i n Time) Rate* • Six-sigma Quality Lev el • Single, Dual and Quad Versions Tape and Reel Options Available * Fo r more information see the Surface Moun t Schottky Reliability Data Sh.
Manufacture

HP

Datasheet
Download HSMS-2864 Datasheet




 HSMS-2864
Surface Mount RF Schottky
Barrier Diodes
Technical Data
HSMS-28XX Series
Features
• Surface Mount SOT-23/SOT-
143 Package
• Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
• Low FIT (Failure in Time)
Rate*
• Six-sigma Quality Level
• Single, Dual and Quad
Versions
• Tape and Reel Options
Available
* For more information see the
Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification
SINGLE
3
TOP VIEW
SERIES
3
COMMON
ANODE
3
12
#0
UNCONNECTED
PAIR
34
12
#2
RING
QUAD
34
12
#3
BRIDGE
QUAD
34
12
#5
12
#7
12
#8
COMMON
CATHODE
3
12
#4
CROSS-OVER
QUAD
34
12
#9
Description/Applications
These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. Typical
applications of these Schottky
diodes are mixing, detecting,
switching, sampling, clamping,
and wave shaping. The
HSMS-2800 series of diodes is
optimized for high voltage
applications. The HSMS-2810
series of diodes features very low
flicker (1/f) noise. The
HSMS-2820 series of diodes is the
best all-around choice for most
applications, featuring low series
resistance, low forward voltage at
all current levels and good RF
characteristics. The HSMS-2860
series is a high performance
diode offering superior Vf and
ultra-low capacitance.
Note that HP’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.




 HSMS-2864
2
Electrical Specifications TA = 25°C, Single Diode[4]
Part
Num-
ber
HSMS[5]
Package
Mark-
ing
Code[3]
Lead
Code
Configuration
Nearest
Equivalent
Axial Lead
Part No.
5082-
Minimum
Break-
down
Voltage
VBR (V)
Maxi-
mum
Forward
Voltage
VF (mV)
Maximum
Forward
Voltage
VF (V) @
IF (mA)
Maximum
Reverse
Leakage
IR (nA) @
VR (V)
Maxi-
mum
Capac-
itance
CT (pF)
Typical
Dynamic
Resis-
tance
RD () [6]
2800 A0 0 Single
2800
(1N5711)
2802 A2 2 Series
2803 A3 3 Common Anode
2804 A4 4 Common
Cathode
2805 A5 5 Unconnected
Pair
2807 A7 7 Ring Quad[6]
2808 A8 8 Bridge Quad[6]
70
400
1.0 15
200 50
2.0
35
2810 B0 0 Single
2810
(1N5712)
2812 B2 2 Series
2813 B3 3 Common Anode
2814 B4 4 Common
Cathode
2815 B5 5 Unconnected
Pair
2817 B7 7 Ring Quad[6]
2818 B8 8 Bridge Quad[6]
20
400
1.0 35
200 15
1.2
15
2820 C0 0 Single
2835
15*
340
0.7 30
100 1
1.0
12
2822 C2 2 Series
2823 C3 3 Common Anode
2824 C4 4 Common
Cathode
2825 C5 5 Unconnected
Pair
2827 C7 7 Ring Quad[6]
2828 C8 8 Bridge Quad[6]
2829 C9 9 Cross-over Quad
2860 T0 0 Single
None
4
350 0.6 30 — 0.35
10
2862 T1 2 Series Pair
2863 T3 3 Common Anode
2864 T4 4 Common
Cathode
2865 T5 5 Unconnected
Pair
Test Conditions
IR = 10 µA
*IR =
100 µA
IF =
1 mA[1]
VF = 0 V
f=
1.0 MHz[2]
IF = 5 mA
Notes:
1. VF for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. CTO for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA, except HSMS-282X which
is measured at 20 mA.
5. See section titled “Quad Capacitance.”
6. RD = RS + 5.2 at 25°C and If = 5 mA.




 HSMS-2864
3
Absolute
Maximum
Ratings[1]
T
A
=
25°C
Symbol
Parameter
Value
If Forward Current (1 ms Pulse)
1 Amp
Pt Total Device Dissipation
250 mW[2]
PIV Peak Inverse Voltage
Same as V
BR
Tj Junction Temperature
150°C
Tstg Storage Temperature
-65 to 150°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
2. CW Power Dissipation at TLEAD = 25°C. Derate to zero at maximum rated
temperature.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. HP defines this
measurement as “CM”, and it is
equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
CDIAGONAL = _C_1_x__C_2_ + _C_3__x_C__4
C1 + C2 C3 + C4
C1
C
C2
A
C3
C4
B
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
CADJACENT = C1 + _______1_____
11 1
–– + –– + ––
C2 C3 C4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter Units
BV V
CJ0 pF
EG eV
IBV A
IS A
N
RS
PB V
PT
M
HSMS-280X
75
1.6
0.69
10E-5
3 x 10E - 8
1.08
30
0.65
2
0.5
HSMS-281X
25
1.1
0.69
10E-5
4.8 x 10E - 9
1.08
10
0.65
2
0.5
HSMS-282X
15
0.7
0.69
10E-4
2.2 x 10E -8
1.08
6.0
0.65
2
0.5
HSMS-286X
7.0
0.18
0.69
10E-5
5.0 x 10E -8
1.08
5.0
0.65
2
0.5



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