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2SC4630. C4630 Datasheet

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2SC4630. C4630 Datasheet






C4630 2SC4630. Datasheet pdf. Equivalent




C4630 2SC4630. Datasheet pdf. Equivalent





Part

C4630

Description

2SC4630



Feature


Ordering number:EN3699A NPN Triple Diff used Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, Hig h-Voltage Switching Applications Featur es · High breakdown voltage (VCEO min= 900V). · Small Cob (typical Cob=2.8pF) . · Full isolation package. · High re liability (Adoption of HVP process). P ackage Dimensions unit:mm 2079B [2SC463 0] 10.0 4.5 2.8 3.5 .
Manufacture

Sanyo Semicon Device

Datasheet
Download C4630 Datasheet


Sanyo Semicon Device C4630

C4630; 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 1 2 3 14.0 Specifications Absolute Ma ximum Ratings at Ta = 25˚C Parameter C ollector-to-Base Voltage Collector-to-E mitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pu lse) Collector Dissipation Junction Tem perature Storage Temperature Symbol VCB O VCEO VEBO IC ICP PC Tj Tstg Condition s 2.55 2.55 1 : .


Sanyo Semicon Device C4630

Base 2 : Collector 3 : Emitter SANYO : T O-220FI (LS) 2.4 0.6 0.7 Ratings 150 0 900 5 100 300 2 150 –55 to +150 Un it V V V mA mA W ˚C ˚C Electrical Ch aracteristics at Ta = 25˚C Parameter w Symbol D a t a Conditions VChB=900V e , IE=0 e VEB=4V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA IC=20mA, IB=4mA IC=20 mA, IB=4mA t 4 U . n Ratings min e ty p t max 10 10 Unit µA.


Sanyo Semicon Device C4630

µA MHz 5 2 V V V V V Collectw or Cuto fwf Curren . t Emitter Cutoff Current D C Current Gain Gain-Bandwidth Product ICBO S IEBO hFE fT 30 6 Collector-to- Emitter Saturation Voltage Base-to-Emit ter Saturation Voltage Collector-to-Bas e Breakdown Voltage Collector-to-Emitte r Breakdown Voltage Emitter-to-Base Bre akdown Voltage VCE(sat) VBE(sat) V(BR )CBO IC=1mA, IE=0 V.

Part

C4630

Description

2SC4630



Feature


Ordering number:EN3699A NPN Triple Diff used Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, Hig h-Voltage Switching Applications Featur es · High breakdown voltage (VCEO min= 900V). · Small Cob (typical Cob=2.8pF) . · Full isolation package. · High re liability (Adoption of HVP process). P ackage Dimensions unit:mm 2079B [2SC463 0] 10.0 4.5 2.8 3.5 .
Manufacture

Sanyo Semicon Device

Datasheet
Download C4630 Datasheet




 C4630
Ordering number:EN3699A
NPN Triple Diffused Planar Silicon Transistor
2SC4630
900V/100mA High-Voltage Amplifier,
High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=900V).
· Small Cob (typical Cob=2.8pF).
· Full isolation package.
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2079B
[2SC4630]
10.0
3.2
4.5
2.8
0.9
1.2 0.7
0.75
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.55
Conditions
Parameter
wCollectwor Cutofwf Curren. t
Emitter Cutoff Current
D
a
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
t
Symbol
Conditions
a ICBO S
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VChB=900Ve , IE=0 e
VEB=4V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
IC=20mA, IB=4mA
IC=20mA, IB=4mA
IC=1mA, IE=0
IC=1mA, RBE=
IE=1mA, IC=0
t
4
U
2.55
.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI (LS)
Ratings
1500
900
5
100
300
2
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ
net
30
6
1500
900
5
max
10
10
5
2
Unit
µA
µA
MHz
V
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11599HA (KT)/91296YK (KOTO) TA-0465 No.3699–1/3




 C4630
Parameter
Output Capacitance
Thermal Resistance
2SC4630
Symbol
Conditions
Cob
Rthj-c
VCB=100V, f=1MHz
Junction – case
Ratings
min typ max
Unit
2.8 pF
12.5 ˚C/W
www.DataSheet4U.net
No.3699–2/3




 C4630
2SC4630
www.DataSheet4U.net
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 1999. Specifications and information herein are subject
to change without notice.
PS No.3699–3/3



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