Ordering number:EN3699A
NPN Triple Diffused Planar Silicon Transistor
2SC4630
900V/100mA High-Voltage Amplifier, High-...
Ordering number:EN3699A
NPN Triple Diffused Planar Silicon
Transistor
2SC4630
900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=2.8pF). · Full isolation package. · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2079B
[2SC4630]
10.0 4.5 2.8
3.5
3.2
7.2 16.0
16.1
0.9 1.2
3.6
0.75 1 2 3
14.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
2.55
2.55
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS)
2.4
0.6
0.7
Ratings 1500 900 5 100 300 2 150 –55 to +150
Unit V V V mA mA W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
w
Symbol
D a t a
Conditions VChB=900V e , IE=0 e VEB=4V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA IC=20mA, IB=4mA IC=20mA, IB=4mA
t 4 U . n
Ratings min
e
typ
t
max 10 10
Unit µA µA MHz 5 2 V V V V V
Collectw or Cutofwf Curren . t Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product
ICBO S IEBO hFE fT
30 6
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
VCE(sat) VBE(sat)
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=1mA, RBE=...
