Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
8.0+0.5 –0.1
...
Power
Transistors
2SB1011
Silicon
PNP triple diffusion planar type
For low-frequency output amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat)
φ 3.16±0.1
3.8±0.3
11.0±0.5
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −400 −400 −5 −100 −200 1.2 150 −55 to +150 Unit V V V
1 2 3 0.75±0.1 4.6±0.2
0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1
mA mA W °C °C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = −100 µA, IE = 0 IC = −500 µA, IB = 0 IE = −100 µA, IC = 0 VCE = −5 V, IC = −30 mA IC = −50 mA, IB = −5 mA IC = −50 mA, IB = −5 mA VCB = −30 V, IE = 20 mA, f = 200 MHz VCB = −30 V, IE = 0, f = 1 MHz 70 9 Min −400 −400 −5 30 −2.5 −1.5 Typ Max Unit V V V ...
