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MOSFET. K4213 Datasheet

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MOSFET. K4213 Datasheet






K4213 MOSFET. Datasheet pdf. Equivalent




K4213 MOSFET. Datasheet pdf. Equivalent





Part

K4213

Description

MOSFET



Feature


DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-chan nel MOS FET device that features a low on-state resistance and excellent switc hing characteristics, and designed for low voltage high current applications s uch as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 .
Manufacture

Renesas

Datasheet
Download K4213 Datasheet


Renesas K4213

K4213; = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) R DS(on)2 = 9.5 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low total gate charge QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A) • 4.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4213-ZK-E1-A Y 2SK4213-ZK-E2-AY Note Note LEAD PLAT ING Pure Sn (Tin) PACKING Tape 2500 p/ reel PACKAGE TO-252 (MP-3.


Renesas K4213

ZK) typ. 0.27 g Note Pb-free (This prod uct does not contain Pb in external ele ctrode). ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V ) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-252) 25 ±2 0 ±64 ±192 45 1.0 150 −55 to +150 2 1 44 V V A A W W °C °C A mJ VDSS VGS S ID(DC) ID(pulse) PT1 PT2 .


Renesas K4213

Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temper ature Single Avalanche Current Single A valanche Energy Note2 Note2 IAS EAS N otes 1. PW ≤ 10 μs, Duty Cycle ≤ 1 % 2. Starting Tch = 25°C, VDD = 12.5 V , RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH The information in this document i s subject to change without n.

Part

K4213

Description

MOSFET



Feature


DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-chan nel MOS FET device that features a low on-state resistance and excellent switc hing characteristics, and designed for low voltage high current applications s uch as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 .
Manufacture

Renesas

Datasheet
Download K4213 Datasheet




 K4213
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.5 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
Low total gate charge
QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
4.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4213-ZK-E1-AY Note
2SK4213-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
25
±20
±64
±192
45
1.0
150
55 to +150
21
44
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 0 V, L = 0.1 mH
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19565EJ1V0DS00 (1st edition)
Date Published December 2008 NS
Printed in Japan
2008




 K4213
2SK4213
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 25 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±16 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 16 A
VGS = 10 V, ID = 30 A
RDS(on)2
VGS = 4.5 V, ID = 20 A
Input Capacitance
Ciss VDS = 15 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 30 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 3 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 15 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 30 A
IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr IF = 30 A, VGS = 0 V,
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
1.5 3.0 V
12 27
S
4.2 6.0 mΩ
6.4 9.5 mΩ
1700
pF
310 pF
200 pF
14 ns
14 ns
49 ns
10 ns
34 nC
5 nC
10 nC
0.86 1.5
V
29 ns
20 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D19565EJ1V0DS




 K4213
2SK4213
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
FORWARD BIAS SAFE OPERATING AREA
1000
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
100
ID(pulse)
ID(DC)
10 RD(SV(oGn)SL=im1ii0teVd)
1
TC = 25°C
Single Pulse
0.1
0.01
0.1
DC
1
PW
= 1i 00
μs
1 ms
10 ms
10 100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125°C/W
10
1 Rth(ch-C) = 2.78°C/W
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
10 100 1000
PW - Pulse Width - s
FORWARD TRANSFER CHARACTERISTICS
30
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
20
TA = 125°C
75°C
25°C
55°C
10
VDS = 10 V
Pulsed
0
012345
VGS - Gate to Source Voltage - V
3
2
1
VDS = VGS
ID = 250 μA
0
-75 -25
25
75 125
Tch - Channel Temperature - °C
175
Data Sheet D19565EJ1V0DS
3



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