IRL7Y1905C

PD-94192D HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRL7Y1905C BVDSS IRL7Y1905C 50V, N-CHANNEL 50V RDS(on) 0.11Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 10 6.3 40 21.5 0.17 ±10 37.5 10 2.15 2.2 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typi...