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Barrier Rectifiers. MBR1040FCT Datasheet

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Barrier Rectifiers. MBR1040FCT Datasheet






MBR1040FCT Rectifiers. Datasheet pdf. Equivalent




MBR1040FCT Rectifiers. Datasheet pdf. Equivalent





Part

MBR1040FCT

Description

Schottky Barrier Rectifiers



Feature


GIE G lobal I ntelligent E lectronics M BR1040FCT~MBR10200FCT Schottky Barrier Rectifiers VOLTAGE 40 to 200 Volts CU RRENT 10 Ampere ITO-220A B FEATURES • • • • • • • • Half Br idge Rectified, Common Cathode Structur e Multilayer Metal - Silicon Potential Structure Beatiful High Temperature Cha racter Have Over Voltage protect loop, high reliability RoHs Products Low.
Manufacture

Global Intelligent Electronics

Datasheet
Download MBR1040FCT Datasheet


Global Intelligent Electronics MBR1040FCT

MBR1040FCT; Voltage High Frequency Switching Power Supply Low Voltage High Frequency Inver s Circuit Low Voltage Continued Circuit and Protection Circuit depth 0.3 1.225 ±0.125 2.700 10.160±0.200 3.000±0.20 0 2.800±0.150 0.800 0.500 15.000±0.20 0 4.500±0.200 1.3 0.625±0.125 2.700± 0.200 MECHANICAL DATA • • • • Operating Junction Temperature: -40°C to +175°C Storage Temperature: -40°.


Global Intelligent Electronics MBR1040FCT

C to +175°C Weight: 1.48g Marking: Type Number 2.540 PIN3 PIN2 Case PIN1 MA XIMUM RATINGS AND ELETRICAL CHARACTERIS TICS PARAMETER Maximum Inverted Repetit ive Peak Voltage *Average Rectified For ward Current (Rated VR-20Khz Square Wav e) - 50 duty cycle Typical Thermal resi stance (per leg) To-220AB ITo-220AB SYM BOL VRRM IF(AV) RΘ JA IFSM dv/dt MBR10 40FCT MBR1060FCT MBR.


Global Intelligent Electronics MBR1040FCT

10100FCT MBR10150FCT MBR10200FCT UNITS V A °C/W 45 60 100 10 2 4 120 10000 1 150 200 Forward Peak Surge Curren t(Rated Load 8.3ms half Mssine Wave-Acc ording to JEDECmethod) Maximum Rate of Voltage Change (at Rated VR) Peak Repet itive Reverse Surge Current (2uS-1Khz) Maximum Forward Voltage Typical Forward Voltage TJ=25°C TJ=125°C TJ=25°C TJ =125°C VR=VRRM IF=5A .

Part

MBR1040FCT

Description

Schottky Barrier Rectifiers



Feature


GIE G lobal I ntelligent E lectronics M BR1040FCT~MBR10200FCT Schottky Barrier Rectifiers VOLTAGE 40 to 200 Volts CU RRENT 10 Ampere ITO-220A B FEATURES • • • • • • • • Half Br idge Rectified, Common Cathode Structur e Multilayer Metal - Silicon Potential Structure Beatiful High Temperature Cha racter Have Over Voltage protect loop, high reliability RoHs Products Low.
Manufacture

Global Intelligent Electronics

Datasheet
Download MBR1040FCT Datasheet




 MBR1040FCT
GIE
Global Intelligent
Electronics
MBR1040FCT~MBR10200FCT
Schottky Barrier Rectifiers
VOLTAGE 40 to 200 Volts CURRENT
10 Ampere
FEATURES
Half Bridge Rectified, Common Cathode Structure
Multilayer Metal - Silicon Potential Structure
Beatiful High Temperature Character
Have Over Voltage protect loop, high reliability
RoHs Products
Low Voltage High Frequency Switching Power Supply
Low Voltage High Frequency Invers Circuit
Low Voltage Continued Circuit and Protection Circuit
MECHANICAL DATA
Operating Junction Temperature: -40°C to +175°C
Storage Temperature: -40°C to +175°C
Weight: 1.48g
Marking: Type Number
ITO-220AB
depth 0.3 2.700
1.225±0.125
2.800±0.150
10.160±0.200
3.000±0.200
0.800
0.500
2.540
0.625±0.125
15.000±0.200
4.500±0.200
1.3
2.700±0.200
PIN2
Case
PIN3
PIN1
MAXIMUM RATINGS AND ELETRICAL CHARACTERISTICS
PARAMETER
SYMBOL MBR1040FCT MBR1060FCT MBR10100FCT MBR10150FCT
Maximum Inverted Repetitive Peak Voltage
VRRM
45
60 100
150
*Average Rectified Forward Current
(Rated VR-20Khz Square Wave) - 50 duty cycle
Typical Thermal resistance (per leg)
To-220AB
ITo-220AB
IF(AV)
RΘ JA
Forward Peak Surge Current(Rated Load 8.3ms half
Mssine Wave-According to JEDECmethod)
IFSM
10
2
4
120
MBR10200FCT
200
UNITS
V
A
°C/W
A
Maximum Rate of Voltage Change (at Rated VR)
dv/dt
10000
V/us
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Maximum Forward Voltage
Typical Forward Voltage
TJ=25°C
TJ=125°C VR=VRRM
TJ=25°C
TJ=125°C
IF=5A
IRRM
IR
VF
*IF(AV) = 5A*2
0.72
0.59~0.64
1
10
1
0.84
0.61~0.65
0.86
0.63~0.68
0.92
0.66~0.72
A
uA
mA
V
January ,2014 http://www.giec.com.tw
PAGE . 1




 MBR1040FCT
GIE
Global Intelligent
Electronics
MBR1040FCT~MBR10200FCT
High Voltage Schottky Diodes(MBR1040FCT)
Tc, Case Temp
Fig.2- CURRENT DERATING CURVE, PER ELEMENT
Vf, Instantaneous Forward Voltage(V)
Fig.1-FORWARD VOLTAGE AND FORWARD
CURRENT CURVE
1 10
REVERSE VOLTAGE(V)
100
Fig.3-THE CRUNODE CAPACITANCE CURVE
VR, REVERSE VOLTAGE(V)
Fig.4- THE REVERSE LEAK CURRENT AND THE REVERSE VOLTAGE(SINGLE-DEVICE) CURVE
January ,2014 http://www.giec.com.tw
PAGE . 2




 MBR1040FCT
GIE
Global Intelligent
Electronics
MBR1040FCT~MBR10200FCT
High Voltage Schottky Diodes(MBR1060FCT)
Tc, Case Temp
Fig.2- CURRENT DERATING CURVE, PER ELEMENT
Vf, Instantaneous Forward Voltage(V)
Fig.1-FORWARD VOLTAGE AND FORWARD
CURRENT CURVE
1 10
REVERSE VOLTAGE(V)
100
Fig.3-THE CRUNODE CAPACITANCE CURVE
VR, REVERSE VOLTAGE(V)
Fig.4- THE REVERSE LEAK CURRENT AND THE REVERSE VOLTAGE(SINGLE-DEVICE) CURVE
January ,2014 http://www.giec.com.tw
PAGE . 3



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