STU/D432S
SamHop Microelectronics Corp. Nov,19,2007 ver1.4
N-Channel Logic Level Enhancement Mode Field Effect Transist...
STU/D432S
SamHop Microelectronics Corp. Nov,19,2007 ver1.4
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
4
PRODUCT SUMMARY
VDSS
40V
FEATURES
( m W ) Max
ID
50A
RDS(ON)
Super high dense cell design for low RDS(ON).
Rugged and reliable. TO-252 and TO-251 Package.
D
9 @ VGS = 10V
D G S
G D
S
G
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed a Drain-Source Diode Forward Current
Avalanche Current Avalanche Energy
c
a
Symbol VDS VGS
a
Limit 40 20 50 100 20 23 130
50 -55 to 175
Unit V V A A A A
mJ
W C
25 C
ID IDM IS I AS E AS
PD TJ, TSTG
b
c
Maximum Power Dissipation
Ta= 25 C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
1
STU/D432S
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
5
Symbol
BVDSS IDSS IGSS
a
Condition
V GS = 0V, ID = 250uA V DS = 32V, V GS =0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V , ID =10A V GS = 4.5V, ID =5A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A
Min Typ Max Unit
40 1 V uA 100 nA 1.25 1.6 7 9 30 28 1130 240 145 3 9 11 V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th) RDS(ON) ID(ON) gFS
b
Drain-So...