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FEP6xT, FEPF6xT, FEPB6xT
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
FEP6xT Series
3 2 1
123 FEPF6xT Series
PIN 1
PIN 2
PIN 1
PIN 2
PIN 3
CASE
PIN 3
D2PAK (TO-263AB) K
2
1
FEPB6xT Series
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
trr VF TJ max. Package
6.0 A 50 V to 200 V
75 A 35 ns 0.975 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Circuit configurations
Common cathode
FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package) • AEC-Q101 qualified
(for ITO-220AB and TO-263AB package) • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL FEP6AT
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward rectified current at TC = 105 °C
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IF(AV) IFSM
Operating storage and temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
TJ, TSTG VAC
FEP6BT FEP6CT
100
150
70
105
100
150
6.0
75
-55 to +150
1500
FEP6DT 200 140 200
UNIT V V V A A °C V
Revision: 08-Jun-2018
1
Document Number: 88598
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
FEP6xT, FEPF6xT, FEPB6xT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT
Maximum instantaneous forward voltage per diode
3.0 A
VF (1)
0.975
Maximum DC reverse current at rated DC blocking voltage per diode
TC = 25 °C IR
TC = 100 °C
5.0 50
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
35
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
28
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
UNIT V μA
ns pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL FEP6
Typical thermal resistance from junction to case per diode
RJC
3.6
FEPF6 5.1
FEPB6 3.6
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
FEP6DT-E3/45
1.81
ITO-220AB
FEPF6DT-E3/45
1.97
TO-263AB
FEPB6DT-E3/45
1.33
TO-263AB ITO-220AB TO-263AB TO-263AB
FEPB6DT-E3/81 FEPF6DTHE3/45 (1) FEPB6DTHE3/45 (1) FEPB6DTHE3/81 (1)
1.33 1.97 1.33 1.33
Note (1) Automotive grade, available in ITO-220AB and TO-263AB package
PACKAGE CODE 45 45 45 81 45 45 81
BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 800/reel
DELIVERY MODE Tube Tube Tube
Tape and reel Tube Tube
Tape and reel
Revision: 08-Jun-2018
2
Document Number: 88598
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
FEP6xT, FEPF6xT, FEPB6xT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
10 Resistive or Inductive Load
8
6
4
2
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Reverse Leakage Current (μA)
100
TJ = 125 °C 10
TJ = 100 °C
1
0.1 TJ = 25 °C
0.01 0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
80
Peak Forward Surge Current (A)
70
60
50
40
30
20
10
0
1
10
100
Number of Cycle.