Document
Power MOSFET
IRFBF30, SiHFBF30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
900 VGS = 10 V
78 10 42 Single
3.7
D
TO-220AB
G
S D G
ORDERING INFORMATION
Package Lead (Pb)-free SnPb
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRFBF30PbF SiHFBF30-E3 IRFBF30 SiHFBF30
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 , IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 70 A/μs, VDD 600, TJ 150 °C. d. 1.6 mm from case.
LIMITE
900 ± 20 3.6 2.3 14 1.0 250 3.6 13 125 1.5 - 55 to + 150 300d 10 1.1
UNIT
V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91122 S11-0516-Rev. B, 21-Mar-11
www.vishay.com 1
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBF30, SiHFBF30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 62 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 900 V, VGS = 0 V
VDS = 720 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 100 V, ID = 2.2 Ab
900 -
-V
- 1.1 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 100 μA
- - 500
- - 3.7
2.3 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
- 1200 - 320 - 200 -
pF
VGS = 10 V
ID = 3.6 A, VDS = 360 V, see fig. 6 and 13b
-
- 78 - 10 nC - 42
- 14 -
VDD = 450 V, ID = 3.6 A, Rg = 12 , RD = 120 , see fig. 10b
- 25 ns
- 90 -
- 30 -
Internal Drain Inductance Internal Source Inductance
LD
Between lead, 6 mm (0.25") from
D
package and center of G
LS die contact S
- 4.5 nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 3.6 A
- - 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
- 430 650 ns TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb
Qrr - 1.4 2.1 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com 2
Document Number: 91122 S11-0516-Rev. B, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFBF30, SiHFBF30
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 -Typical Output Characteristics, TC = 150 °C
Fig. 4 .