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IRFBF30 Dataheets PDF



Part Number IRFBF30
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFBF30 DatasheetIRFBF30 Datasheet (PDF)

Power MOSFET IRFBF30, SiHFBF30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 78 10 42 Single 3.7 D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation MOSFETs fr.

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Power MOSFET IRFBF30, SiHFBF30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 78 10 42 Single 3.7 D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBF30PbF SiHFBF30-E3 IRFBF30 SiHFBF30 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 , IAS = 3.6 A (see fig. 12). c. ISD  3.6 A, dI/dt  70 A/μs, VDD  600, TJ  150 °C. d. 1.6 mm from case. LIMITE 900 ± 20 3.6 2.3 14 1.0 250 3.6 13 125 1.5 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91122 S11-0516-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBF30, SiHFBF30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 900 V, VGS = 0 V VDS = 720 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 2.2 Ab VDS = 100 V, ID = 2.2 Ab 900 - -V - 1.1 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 100 μA - - 500 - - 3.7  2.3 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1200 - 320 - 200 - pF VGS = 10 V ID = 3.6 A, VDS = 360 V, see fig. 6 and 13b - - 78 - 10 nC - 42 - 14 - VDD = 450 V, ID = 3.6 A, Rg = 12 , RD = 120 , see fig. 10b - 25 ns - 90 - - 30 - Internal Drain Inductance Internal Source Inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 nH - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 3.6 A - - 14 Body Diode Voltage VSD TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr - 430 650 ns TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb Qrr - 1.4 2.1 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com 2 Document Number: 91122 S11-0516-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFBF30, SiHFBF30 Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 -Typical Output Characteristics, TC = 150 °C Fig. 4 .


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