IRFB7437PBF

Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free* StrongIRFET™ IRFB7437PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 40V 1.5mΩ 2.0mΩ c250A S ID (Package Limited) 195A D DS G TO-220AB IRFB7437PbF G Gate D Drain S Source Base Part Number IRFB7437PbF Package Type TO-220 Standard Pack Form Tube Quantity 50 Orderable Part Number IRFB7437PbF RDS(on), Drain-to -Source On Resistance (mΩ) ID , Drain Current (A) 6 ID = 100A 5 4 3 TJ = 125°C 2 1 TJ = 25°C 0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 250 LIMITED BY PACKAGE 200 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback January 6, 2015 IRFB7437PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Con...