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Power-Transistor. IPD14N06S2-80 Datasheet

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Power-Transistor. IPD14N06S2-80 Datasheet






IPD14N06S2-80 Power-Transistor. Datasheet pdf. Equivalent




IPD14N06S2-80 Power-Transistor. Datasheet pdf. Equivalent





Part

IPD14N06S2-80

Description

Power-Transistor



Feature


IPD14N06S2-80 OptiMOS® Power-Transisto r Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 1 75°C operating temperature • Green p ackage (lead free) • Ultra low Rds(on ) • 100% Avalanche tested Product Su mmary V DS R DS(on),max (SMD version) I D 55 80 17 V mΩ A PG-TO252-3-11 Typ e IPD14N06S2-80 Package PG-TO252-3-1.
Manufacture

Infineon Technologies AG

Datasheet
Download IPD14N06S2-80 Datasheet


Infineon Technologies AG IPD14N06S2-80

IPD14N06S2-80; 1 Marking 2N0680 Maximum ratings, at T j=25 °C, unless otherwise specified P arameter Continuous drain current Symbo l ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain cu rrent1) Avalanche energy, single pulse Gate source voltage Power dissipation O perating and storage temperature IEC cl imatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j,.


Infineon Technologies AG IPD14N06S2-80

T stg T C=25 °C T C=25 °C I D=14A Val ue 17 12 68 43 ±20 47 -55 ... +175 55/ 175/56 mJ V W °C Unit A Rev. 1.0 pag e 1 2006-07-18 IPD14N06S2-80 Paramet er Symbol Conditions min. Values typ . max. Unit Thermal characteristics T hermal resistance, junction - case Ther mal resistance, junction ambient, leade d SMD version, device on PCB R thJC R t hJA R thJA minimal foo.


Infineon Technologies AG IPD14N06S2-80

tprint 6 cm2 cooling area2) Electrical c haracteristics, at T j=25 °C, unless o therwise specified Static characteristi cs Drain-source breakdown voltage Gate threshold voltage Zero gate voltage dra in current V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) I DSS V DS=V GS, I D=14 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain.

Part

IPD14N06S2-80

Description

Power-Transistor



Feature


IPD14N06S2-80 OptiMOS® Power-Transisto r Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 1 75°C operating temperature • Green p ackage (lead free) • Ultra low Rds(on ) • 100% Avalanche tested Product Su mmary V DS R DS(on),max (SMD version) I D 55 80 17 V mΩ A PG-TO252-3-11 Typ e IPD14N06S2-80 Package PG-TO252-3-1.
Manufacture

Infineon Technologies AG

Datasheet
Download IPD14N06S2-80 Datasheet




 IPD14N06S2-80
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD14N06S2-80
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
80 m
17 A
PG-TO252-3-11
Type
IPD14N06S2-80
Package
Marking
PG-TO252-3-11 2N0680
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=14A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
17
12
68
43
±20
47
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18




 IPD14N06S2-80
IPD14N06S2-80
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 3.2 K/W
- - 100
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=14 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V,
T j=125 °C2)
-
1 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=7 A,
- 50.0 80.0 m
Rev. 1.0
page 2
2006-07-18




 IPD14N06S2-80
IPD14N06S2-80
Parameter
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
Symbol
Conditions
min.
Values
typ.
Unit
max.
C iss - 293 - pF
C oss
V GS=0 V, V DS=25 V,
f =1 MHz
-
94
-
Crss - 37 -
t d(on)
- 6 - ns
tr
V DD=30 V, V GS=10 V,
-
17
-
t d(off)
I D=14 A, R G=39
- 15 -
t f - 20 -
Q gs - 1.6 2 nC
Q gd V DD=44 V, I D=14 A, - 3.7 5
Q g V GS=0 to 10 V
- 8.0 10
V plateau
- 5.7 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=17 A,
T j=25 °C
t rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
Q rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
- - 17 A
- - 68
- 0.9 1.3 V
- 25 - ns
- 35 - nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-07-18



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