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Level Enhancement. P06P03LCG Datasheet

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Level Enhancement. P06P03LCG Datasheet






P06P03LCG Enhancement. Datasheet pdf. Equivalent




P06P03LCG Enhancement. Datasheet pdf. Equivalent





Part

P06P03LCG

Description

P-Channel Logic Level Enhancement



Feature


NIKO-SEM P-Channel Logic Level Enhancem ent Mode Field Effect Transistor P06P0 3LCG SOT-89 Lead-Free D PRODUCT SUMMAR Y V(BR)DSS -30 RDS(ON) 45m ID -4A 3 G S 1 1. GATE 2. DRAIN 3. SOURCE ABSOLU TE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDIT IONS Drain-Source Voltage Gate-Source V oltage Continuous Drain Current Pulsed Drain Current Power.
Manufacture

NIKO-SEM

Datasheet
Download P06P03LCG Datasheet


NIKO-SEM P06P03LCG

P06P03LCG; Dissipation 1 SYMBOL VDS VGS 2 LIMIT S -30 ±20 -4 -3 -20 0.78 0.62 -55 to 1 50 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W Operating Junction & Stor age Temperature Range THERMAL RESISTANC E RATINGS THERMAL RESISTANCE Junction-t o-Case Junction-to-Ambient 1 2 °C UNI TS °C / W °C / W SYMBOL RθJc RθJA TYPICAL MAXIMUM 18 160 Pu.


NIKO-SEM P06P03LCG

lse width limited by maximum junction te mperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless O therwise Noted) PARAMETER SYMBOL TEST C ONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo dy Leakage Zero Gate Voltage Drain Curr ent On-State Drain Current1 Drain-Sourc e On-State Resistance1 Forward Transcon ductance1 V(BR)DSS VG.


NIKO-SEM P06P03LCG

S(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250 A VDS = 0V, VGS = ±20V VDS = -24V, VG S = 0V VDS = -20V, VGS = 0V, TJ = 125 C VDS = -5V, VGS = -10V VGS = -4.5V, I D =- 3A VGS = -10V, ID = -4A VDS = -10V , ID = -4A -20 60 37 16 75 45 -30 -0.9 -1.5 -3 ±100 nA 1 10 µA A m S V LIMIT S UNIT MIN TYP MAX Sep-26-2005 1 NIKO -SEM P-Channel Logic Le.

Part

P06P03LCG

Description

P-Channel Logic Level Enhancement



Feature


NIKO-SEM P-Channel Logic Level Enhancem ent Mode Field Effect Transistor P06P0 3LCG SOT-89 Lead-Free D PRODUCT SUMMAR Y V(BR)DSS -30 RDS(ON) 45m ID -4A 3 G S 1 1. GATE 2. DRAIN 3. SOURCE ABSOLU TE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDIT IONS Drain-Source Voltage Gate-Source V oltage Continuous Drain Current Pulsed Drain Current Power.
Manufacture

NIKO-SEM

Datasheet
Download P06P03LCG Datasheet




 P06P03LCG
NIKO-SEM
P-Channel Logic Level Enhancement P06P03LCG
Mode Field Effect Transistor
SOT-89
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 45m
ID
-4A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
LIMITS
-30
±20
-4
-3
-20
0.78
0.62
-55 to 150
MAXIMUM
UNITS
V
V
A
W
°C
UNITS
Junction-to-Case
RθJc
18 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
160 °C / W
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-30
-0.9 -1.5 -3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
1
µA
10
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = -5V, VGS = -10V
VGS = -4.5V, ID =- 3A
VGS = -10V, ID = -4A
VDS = -10V, ID = -4A
-20
60
37
16
A
75
m
45
S
Sep-26-2005
1




 P06P03LCG
NIKO-SEM
P-Channel Logic Level Enhancement P06P03LCG
Mode Field Effect Transistor
SOT-89
Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -4A
VDS = -15V,
ID -1A, VGS = -10V, RGS = 6
530
135
70
10 14
2.2
2
5.7
10
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
trr IF = -4A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
-2.1
-4
-1.2
15.5
7.9
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P06P03G”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.
Sep-26-2005
2




 P06P03LCG
NIKO-SEM
P-Channel Logic Level Enhancement P06P03LCG
Mode Field Effect Transistor
SOT-89
Lead-Free
Typical Characteristics
BODY DIODE FORWARD VOLTAGE VARIATION
WITH SOURCE CURRENT AND TEMPERATURE
Sep-26-2005
3



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