P06P03LCG

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P06P03LCG SOT-89 Lead-Free D PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 45m ID -4A 3 G S 1 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS 2 LIMITS -30 ±20 -4 -3 -20 0.78 0.62 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 °C UNITS °C / W °C / W SYMBOL RθJc RθJA TYPICAL MAXIMUM 18 160 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID =- 3A VGS = -10V, ID = -4A VDS = -10V, ID = -4A -20 60 37 16 75 45 -30 -0.9 -1.5 -3 ±100 nA 1 10 µA A m S V LIMITS UNIT MIN TYP MAX Sep-26-2005 1 NIKO-SEM P-Channel Logic Level Enhancement Mode...