RFN10NS3S

Data Sheet Super Fast Recovery Diode RFN10NS3S lSeries Standard Fast Recovery lDimensions (Unit : mm) lLand size figure (Unit : mm) lApplications General rectification RFN10 NS3S ① lFeatures 1)Low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S lStructure ② lConstruction Silicon epitaxial planer ① Manufacture Year, Week and Day ① ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature (*) 1-3pin common circuit lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time (*) IR trr IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load Tc=88°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C (*) Limits 350 350 10 100 150 -55 to +150 Unit V V A A C C Conditions IF=10A VR=350V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 1.25 0.05 22 － Max. 1.5 10 30 4.0 Unit V μA ns °C/W Thermal resistance Rth(j-c) (*) Design assurance without measurement. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RFN10NS3S 　 Data Sheet 100 100000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Tj=125°C 10 Tj=150°C 10000 Tj=150°C Tj=125°C 1000 Tj=75°C 1 Tj=25°C 100 Tj=75°C 10 Tj=25°C 0.1...