6N40C

FQP6N40C — N-Channel QFET® MOSFET December 2013 FQP6N40C N-Channel QFET® MOSFET 400 V, 6.0 A, 1.0 Ω Description Features 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A Low Gate Charge (Typ. 16 nC) Low Crss (Typ. 15 pF) 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP6N40C 400 6 3.6 24 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. 270 6 7.3 4.5 73 0.58 -55 to +150 300 Thermal Characteristics  +θ +θ   FQP6N40C 1.71 62.5 Thermal Resistance, Junct...