ZXMN3A02N8

ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package SO8 APPLICATIONS Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMN3A02N8TA ZXMN3A02N8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMN 3A02 Top View ISSUE 4 - JANUARY 2005 1 SEMICONDUCTORS ZXMN3A02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =-10V; T A =25°C (b) V GS =-10V; T A =70°C (b) V GS =-10V; T A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 30 20 9.0 7.2 7.3 44 3.2 44 1.56 12.5 2.5 20 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 80 50 UNIT °C/W °C/W NOTES (a) For a device su...