AUIRL7736M2TR

PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 2.2mΩ max. 3.0mΩ ID (Silicon Limited) 112A Qg 52nC Logic Level Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free S D G S S S D Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 M4 DirectFET ® ISOMETRIC L4 L6 L8 Description The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology a...