AUIRL7732S2TR1

PD - 97635A AUTOMOTIVE GRADE Logic Level Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 5.0mΩ max. 6.6mΩ ID (Silicon Limited) 58A Qg 22nC AUIRL7732S2TR AUIRL7732S2TR1 S D G S D Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 SC DirectFET ™ ISOMETRIC L4 L6 L8 Description The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile. The DirectFET ® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the...