AnaSem
Analog Semiconductor IC
VDD Series
Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit
(IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E13-01
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AnaSem
.......... Future of the analog world
Rev. E13-01
Products Data Sheet
AnaSem
Analog Semiconductor IC
Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
VDD Series
GENERAL DESCRIPTIONS
The VDD series are delay circuit built-in voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in high accuracy by using the laser trimming technology. Because the delay circuit is built-in, delay time can be set without any external components.
HALOGEN RoHS
COMPLIANCE
FEATURES
1.8V~6.0V (selectable with a step of 0.1V) Detection voltage range ·································································· 0.7V~6.0V Operating voltage range ·································································· ±1% (VDET=1.8V~6.0V) High accuracy detection voltage ····················································· Typ. ±20ppm/°C (VDET=1.8V~6.0V) Detection voltage temperature characteristics ·································································· S/10~50ms, M/50~200ms, L/80~400ms Delay time ························································································· CMOS or N-channel open drain Output types ························································································· Typ. 0.6µA (VIN=1.5V) Low current consumption ·································································· –40°C ~ +85°C Operating temperature range ·································································· SOT-23 (2.9×2.8×1.1mm) Small package ·························································································
APPLICATIONS
Reset of microprocessor Power-on reset of system Charge detection of battery Battery back-up of memory Monitoring of battery life time Delay circuit
AnaSem
1
www.anasemi.com
[email protected]
.......... Future of the analog world
Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
PRODUCTS NUMBERING GUIDE
VDD
Design version Package form Output type A : TOPR = –40°C ~ +85°C T : SOT-23 C : CMOS output N : N-channel open drain output S : 10msec~50msec M : 50msec~200msec L : 80msec~400msec 1 : ±1% 18 ~ 60 : Selectable with a step of 0.1V in the range of 1.8V ~ 6.0V e.g.) 18 : 1.8V 30 : 3.0V
Delay time
Detection accuracy rate Detection voltage
PIN CONFIGURATION / MARKING SPECIFICATION (SOT-23)
Pin Configuration
Vin 3
No. 1 2
Symbol VOUT VSS VIN Output
Descriptions
Power ground Voltage input
A B C D E
F F F F
3
Marking Specification
1 Vout 2 Vss
Code A BC D E F
Mark C or N 18~60 S, M or L A Internal rule
Contents Output type Detection voltage Delay time Version Lot number
(Top view)
AnaSem
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www.anasemi.com
[email protected]
.......... Future of the analog world
Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL APPLICATION CIRCUITS
CMOS output N-channel open drain output
VOUT VIN VSS
100KΩ VIN
VOUT
VSS
BLOCK DIAGRAM
CMOS output
VIN VIN
N-channel open drain output
+
Voltage Reference
_
Delay circuit
VOUT
Voltage Reference
+ _
Delay circuit
VOUT
Vss
Vss
ABSOLUTE MAXIMUM RATINGS
Items Input voltage range Output current Output voltage range Power dissipation ※1) SOT-23 Symbol VIN IOUT VOUT PD TOPR TSTG Ratings –0.3 ~ +7.0 50 VSS –0.3 ~ VIN +0.3 400 –40 ~ +85 –55 ~ +125 Unit V mA V mW °C °C
Operating temperature range Storage temperature range
Note : ※1)
Power dissipation depends on conditions of mounting on boards. PCB dimension is 50mm×50mm×1.6mm.
AnaSem
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www.anasemi.com
[email protected]
.......... Future of the analog world
Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
ELECTRICAL CHARACTERISTICS
(Ta=25°C unless otherwise specified) Items Operating voltage Detection voltage Hysteresis range Symbol VIN VDET VHYS VIN=0.7V VIN=1.0V VIN=2.0V VIN=3.0V VIN=4.0V VIN=5.0V CMOS P-ch VDS=2.1V CMOS N-ch VDS=2.1V VIN=6.0V VIN=6.0V VIN=1.5V VIN=2.0V Current consumption ISS VIN=3.0V VIN=4.0V VIN=5.0V Leak current Detection voltage temperature coefficient ILEAK ∆VDET / ∆Ta•VDET VIN=6.0V VOUT=6.0V VDET = 1.8V ~ 6.0V Ta = –40°C ~ +85°C Conditions VDET = 1.8V ~ 6.0V VDET = 1.8V ~ 6.0V Ta = –40°C ~ +85°C Min. 0.7 VDET ×0.99 VDET ×0.02 0.1 1.0 3.0 5.0 6.0 7.0 1.5 10 Delay time VREL→VOUT inversion TDLY VIN = 0.7V ~ 6.0V 50 80 Typ. VDET VDET ×0.05 0.4 2.3 8.2 11.1 12.8 13.8 -9.5 9.5 0.6 0.7 0.8 0.9 1.0 10 ±20.