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VDD25SNTA Dataheets PDF



Part Number VDD25SNTA
Manufacturers AnaSem
Logo AnaSem
Description High detect accuracy CMOS Voltage Detector
Datasheet VDD25SNTA DatasheetVDD25SNTA Datasheet (PDF)

AnaSem Analog Semiconductor IC VDD Series Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit (IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E13-01 Website: Tel: Email: www.anasemi.com +852-3590-8442 [email protected] AnaSem Future of the analog world Rev. E13-01 Products Data Sheet AnaSem Analog Semiconductor IC Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector VDD Ser.

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AnaSem Analog Semiconductor IC VDD Series Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit (IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E13-01 Website: Tel: Email: www.anasemi.com +852-3590-8442 [email protected] AnaSem .......... Future of the analog world Rev. E13-01 Products Data Sheet AnaSem Analog Semiconductor IC Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector VDD Series GENERAL DESCRIPTIONS The VDD series are delay circuit built-in voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in high accuracy by using the laser trimming technology. Because the delay circuit is built-in, delay time can be set without any external components. HALOGEN RoHS COMPLIANCE FEATURES 1.8V~6.0V (selectable with a step of 0.1V) Detection voltage range ·································································· 0.7V~6.0V Operating voltage range ·································································· ±1% (VDET=1.8V~6.0V) High accuracy detection voltage ····················································· Typ. ±20ppm/°C (VDET=1.8V~6.0V) Detection voltage temperature characteristics ·································································· S/10~50ms, M/50~200ms, L/80~400ms Delay time ························································································· CMOS or N-channel open drain Output types ························································································· Typ. 0.6µA (VIN=1.5V) Low current consumption ·································································· –40°C ~ +85°C Operating temperature range ·································································· SOT-23 (2.9×2.8×1.1mm) Small package ························································································· APPLICATIONS Reset of microprocessor Power-on reset of system Charge detection of battery Battery back-up of memory Monitoring of battery life time Delay circuit AnaSem 1 www.anasemi.com [email protected] .......... Future of the analog world Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector Rev. E13-01 VDD Series PRODUCTS NUMBERING GUIDE VDD Design version Package form Output type A : TOPR = –40°C ~ +85°C T : SOT-23 C : CMOS output N : N-channel open drain output S : 10msec~50msec M : 50msec~200msec L : 80msec~400msec 1 : ±1% 18 ~ 60 : Selectable with a step of 0.1V in the range of 1.8V ~ 6.0V e.g.) 18 : 1.8V 30 : 3.0V Delay time Detection accuracy rate Detection voltage PIN CONFIGURATION / MARKING SPECIFICATION (SOT-23) Pin Configuration Vin 3 No. 1 2 Symbol VOUT VSS VIN Output Descriptions Power ground Voltage input A B C D E F F F F 3 Marking Specification 1 Vout 2 Vss Code A BC D E F Mark C or N 18~60 S, M or L A Internal rule Contents Output type Detection voltage Delay time Version Lot number (Top view) AnaSem 2 www.anasemi.com [email protected] .......... Future of the analog world Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector Rev. E13-01 VDD Series TYPICAL APPLICATION CIRCUITS CMOS output N-channel open drain output VOUT VIN VSS 100KΩ VIN VOUT VSS BLOCK DIAGRAM CMOS output VIN VIN N-channel open drain output + Voltage Reference _ Delay circuit VOUT Voltage Reference + _ Delay circuit VOUT Vss Vss ABSOLUTE MAXIMUM RATINGS Items Input voltage range Output current Output voltage range Power dissipation ※1) SOT-23 Symbol VIN IOUT VOUT PD TOPR TSTG Ratings –0.3 ~ +7.0 50 VSS –0.3 ~ VIN +0.3 400 –40 ~ +85 –55 ~ +125 Unit V mA V mW °C °C Operating temperature range Storage temperature range Note : ※1) Power dissipation depends on conditions of mounting on boards. PCB dimension is 50mm×50mm×1.6mm. AnaSem 3 www.anasemi.com [email protected] .......... Future of the analog world Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector Rev. E13-01 VDD Series ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) Items Operating voltage Detection voltage Hysteresis range Symbol VIN VDET VHYS VIN=0.7V VIN=1.0V VIN=2.0V VIN=3.0V VIN=4.0V VIN=5.0V CMOS P-ch VDS=2.1V CMOS N-ch VDS=2.1V VIN=6.0V VIN=6.0V VIN=1.5V VIN=2.0V Current consumption ISS VIN=3.0V VIN=4.0V VIN=5.0V Leak current Detection voltage temperature coefficient ILEAK ∆VDET / ∆Ta•VDET VIN=6.0V VOUT=6.0V VDET = 1.8V ~ 6.0V Ta = –40°C ~ +85°C Conditions VDET = 1.8V ~ 6.0V VDET = 1.8V ~ 6.0V Ta = –40°C ~ +85°C Min. 0.7 VDET ×0.99 VDET ×0.02 0.1 1.0 3.0 5.0 6.0 7.0 1.5 10 Delay time VREL→VOUT inversion TDLY VIN = 0.7V ~ 6.0V 50 80 Typ. VDET VDET ×0.05 0.4 2.3 8.2 11.1 12.8 13.8 -9.5 9.5 0.6 0.7 0.8 0.9 1.0 10 ±20.


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