Document
NTD4813N Power MOSFET
Features
30 V, 40 A, Single N-Channel, DPAK/IPAK
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices
V(BR)DSS 30 V
http://onsemi.com
RDS(ON) MAX 13 mΩ @ 10 V 24 mΩ @ 4.5 V D 40 A ID MAX
Applications
• CPU Power Delivery • DC--DC Converters • High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) Power Dissipation RθJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.0 7.0 1.94 7.6 5.9 1.27 40 31 35.3 90 35 --55 to +175 29 6 72 W A A °C A W A W A Unit V V A
G S N-CHANNEL MOSFET 4 4 1 2 1 4
3
CASE 369AA DPAK (Bent Lead) STYLE 2
3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK)
2 3
1
2
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain YWW 48 13NG 4 Drain YWW 48 13NG 4 Drain YWW 48 13NG
Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt
V/ns mJ
Single Pulse Drain--to--Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4813N G = Year = Work Week = Device Code = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
June, 2010 - Rev. 6
1
Publication Order Number: NTD4813N/D
NTD4813N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient – Steady State (Note 1) Junction--to--Ambient – Steady State (Note 2) 1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu. 2. Surface--mounted on FR4 board using the minimum recommended pad size. Symbol RθJC RθJC--TAB RθJA RθJA Value 4.25 3.5 77.5 118.5 °C/W Unit
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain--to--Source Breakdown Voltage Drain--to--Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V to .