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NTD4813N Dataheets PDF



Part Number NTD4813N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTD4813N DatasheetNTD4813N Datasheet (PDF)

NTD4813N Power MOSFET Features 30 V, 40 A, Single N-Channel, DPAK/IPAK • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 13 mΩ @ 10 V 24 mΩ @ 4.5 V D 40 A ID MAX Applications • CPU Power Delivery • DC--DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain--to--Source Voltage Gate--t.

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NTD4813N Power MOSFET Features 30 V, 40 A, Single N-Channel, DPAK/IPAK • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 13 mΩ @ 10 V 24 mΩ @ 4.5 V D 40 A ID MAX Applications • CPU Power Delivery • DC--DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) Power Dissipation RθJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.0 7.0 1.94 7.6 5.9 1.27 40 31 35.3 90 35 --55 to +175 29 6 72 W A A °C A W A W A Unit V V A G S N-CHANNEL MOSFET 4 4 1 2 1 4 3 CASE 369AA DPAK (Bent Lead) STYLE 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 1 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 13NG 4 Drain YWW 48 13NG 4 Drain YWW 48 13NG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt V/ns mJ Single Pulse Drain--to--Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4813N G = Year = Work Week = Device Code = Pb--Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 June, 2010 - Rev. 6 1 Publication Order Number: NTD4813N/D NTD4813N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient – Steady State (Note 1) Junction--to--Ambient – Steady State (Note 2) 1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu. 2. Surface--mounted on FR4 board using the minimum recommended pad size. Symbol RθJC RθJC--TAB RθJA RθJA Value 4.25 3.5 77.5 118.5 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain--to--Source Breakdown Voltage Drain--to--Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V to .


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