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NVD4813NH Dataheets PDF



Part Number NVD4813NH
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NVD4813NH DatasheetNVD4813NH Datasheet (PDF)

NTD4813NH, NVD4813NH Power MOSFET Features 30 V, 40 A, Single N−Channel, DPAK/IPAK • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13 mW @ 10 V 25.9 mW @ 4.5 V D ID MAX 40 A Applications • CPU Power Delivery • DC−DC Converters • High Side Switching .

  NVD4813NH   NVD4813NH


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NTD4813NH, NVD4813NH Power MOSFET Features 30 V, 40 A, Single N−Channel, DPAK/IPAK • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13 mW @ 10 V 25.9 mW @ 4.5 V D ID MAX 40 A Applications • CPU Power Delivery • DC−DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.0 7.0 1.94 7.6 5.9 1.27 40 31 35.3 90 35 −55 to +175 29 6 44.4 W A A °C A V/ns mJ W A W A Unit V V A G S N−CHANNEL MOSFET 4 1 2 3 DPAK CASE 369AA (Bent Lead) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW 48 13NHG 2 1 Drain 3 Gate Source Y WW 4813NH G = Year = Work Week = Device Code = Pb−Free Package Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 17.2 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 3 1 Publication Order Number: NTD4813NH/D NTD4813NH, NVD4813NH THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJC−TAB RqJA RqJA Value 4.25 3.5 77.5 118.5 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V to 11.5 V VGS = 4.5 V Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 10 19.5 10.3 2.9 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 12 V 940 201 115 7.1 1.6 3.4 3.0 18.2 nC 10 nC pF gFS ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 15 V, ID = 10 A VGS = 0 V, VDS = 24 V TJ = 25 °C TJ = 125°C VGS = 0 V, ID = 250 mA 30 24.5 1 10 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.5 5.4 10.9 10.7 20.9 18.5 6.7 2.5 V mV/°C 13 mW 25.9 S 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD4813NH, NVD4813NH ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LD LG RG TA = 25°C VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25°C TJ = 125°C 0.95 0.9 15 9.9 5.1 7.0 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 5.1 16.1 17.2 1.8 ns Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance 2.49 0.0164 1.88 3.46 0.55 nH W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteri.


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