PMPB11EN
MD -6
30 V N-channel Trench MOSFET
Rev. 1 — 16 May 2012 Product data sheet
1. Product profile
1.1 General des...
PMPB11EN
MD -6
30 V N-channel Trench MOSFET
Rev. 1 — 16 May 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF
N2
020
1.2 Features and benefits
Trench MOSFET technology Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 9 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20 -
Typ 12
Max 30 20 13 14.5
Unit V V A mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
NXP Semiconductors
PMPB11EN
30 V N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description D D G S D D D S drain drain gate source drain drain drain source
3 8 4
S
017aaa253
Simplified outline
Graphic sym...