W10NC70Z Datasheet: STW10NC70Z





W10NC70Z STW10NC70Z Datasheet

Part Number W10NC70Z
Description STW10NC70Z
Manufacture ST Microelectronics
Total Page 8 Pages
PDF Download Download W10NC70Z Datasheet PDF

Features: N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW10NC70Z s s STW10NC70Z VDSS 700 V RDS(on) < 0.75 Ω ID 10.6 A s s s TYPICAL RDS(on) = 0.58 Ω EXTREM ELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VER Y LOW INTRINSIC CAPACITANCES GATE CHARG E MINIMIZED TO-247 DESCRIPTION The thi rd generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit are a while integrating back-to-back Zener diodes between gate and source. Such ar rangement gives extra ESD capability wi th higher ruggedness performance as req uested by a large variety of single-swi tch applications. APPLICATIONS s SINGLE -ENDED SMPS IN MONITORS, COMPUTER AND I NDUSTRIAL APPLICATION s WELDING EQUIPME NT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD( G-S) dv/dt (1) Tstg Tj Parameter Drain- source Voltage (VGS = 0) Drain-gate Vol tage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC =.

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STW10NC70Z
N-CHANNEL 700V - 0.58 - 10.6A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STW10NC70Z
700 V < 0.75 10.6 A
s TYPICAL RDS(on) = 0.58
s EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 10.6A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed
Sep 2000
Value
700
700
±25
10.6
6.7
42
190
1.51
±50
4
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
1/8

                    
  






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