W10NC70Z

N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW10NC70Z s s STW10NC70Z VDSS 700 V RDS(on) < 0.75 Ω ID 10.6 A s s s TYPICAL RDS(on) = 0.58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 700 700 ±25 10.6 6.7 42 190 1.51 ±50 4 3 –65 to 150 150 Unit V V V A A A W W/°C mA KV V/ns °C °C ()Pulse width limited by safe operating area (1)ISD ≤10.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maxim...