Document
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOS™ E6 Power Transistor IPx60R190E6
Data Sheet
Rev. 2.0, 2010-05-03 Final
In d u s tr ia l & M u l ti m a r k e t
600V CoolMOS™ E6 Power Transistor
IPP60R190E6, IPA60R190E6 IPW60R190E6
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Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS ™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free
drain pin 2
gate pin 1
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 650 0.19 63 59 5.2 500 Package PG-TO247 PG-TO220 PG-TO220 FullPAK 6R190E6 Unit V ! nC A µJ A/µs Marking Related Links
source pin 3
VDS @ Tj,max
R DS(on),max
Qg,typ ID,pulse Eoss @ 400V
Body diode d i/d t
Type / Ordering Code IPW60R190E6 IPP60R190E6 IPA60R190E6
IFX CoolMOS Webpage IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
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Rev. 2.0, 2010-05-03
600V CoolMOS™ E6 Power Transistor IPx60R190E6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 3 4 5 6 7 8 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
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Rev. 2.0, 2010-05-03
600V CoolMOS™ E6 Power Transistor IPx60R190E6
Maximum ratings
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Maximum ratings
at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Pulsed drain current
2) 1)
Maximum ratings Symbol Min. ID ID,pulse EAS EAR IAR dv/dt VGS Ptot Ptot Tj,Tstg -20 -30 -55 Values Typ. Max. 20.2 12.8 59 418 0.63 3.4 50 20 30 151 34 150 60 50 IS IS,pulse dv/dt 17.5 59 15 500 A A V/ns A/µs °C Ncm M3 and M3.5 screws M2.5 screws TC=25 °C TC=25 °C VDS =0...400 V,ISD " I D, Tj=25 °C (see table 21) W A V/ns V VDS =0...480 V static AC (f>1 Hz) TC=25 °C A mJ A TC= 25 °C TC= 100°C TC=25 °C ID=3.4 A,VDD=50 V (see table 20) ID=3.4 A,VDD=50 V Unit Note / Test Condition
Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation for TO-220, TO-247 Power dissipation for TO-220 FullPAK Operating and storage temperature Mounting torque TO-220, TO-247 Mounting torque TO-220 FullPAK Continuous diode forward current Diode pulse current
2) 3)
Reverse diode dv/dt
Maximum diode commutation dif/dt speed3) 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
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Rev. 2.0, 2010-05-03
600V CoolMOS™ E6 Power Transistor IPx60R190E6
Thermal characteristics
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Thermal characteristics
Table 3 Parameter
Thermal characteristics TO-220 (IPP60R190E6),TO-247 (IPW60R190E6) Symbol Min. Values Typ. Max. 0.83 62 260 °C °C/W leaded 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition
Thermal resistance, junction - case RthJC Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads Table 4 Parameter
RthJA Tsold
Thermal characteristics TO-220 FullPAK (IPA60R190E6) Symbol Min.