60R190E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS ™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free drain pin 2 gate pin 1 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 650 0.19 63 59 5.2 500 Package PG-TO247 PG-TO220 PG-TO220 FullPAK 6R190E6 Unit V ! nC A µJ A/µs Marking Related Links source pin 3 VDS @ Tj,max R DS(on),max Qg,ty...