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CQ223M CQ223N
Central
TM
Semiconductor Corp.
1.0 AMP TRIAC 600 THRU 800 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TC=25°C) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge (tp=10 ms) Peak Gate Current Average Gate Power Dissipation Storage Temperature Junction Temperature Thermal Reistance VDRM IT (RMS) ITSM IGM PG (AV) Tstg TJ ΘJC CQ223M 600 CQ223N 800 UNITS V A A A W °C °C °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IH VGT VGT VTM dv/dt VD=Rated VDRM VD=Rated VDRM, TC=125°C VD=12V, QUAD I, II, III, IV VD=12V VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=1.0A VD=2/3 VDRM, TC=125°C 5.0
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1.0 10 1.0 0.1 -40 to +150 -40 to +125 10 TYP
MAX 10 200 10 10 2.0 2.5 2.0
UNITS µA µA mA mA V V V V/µs
R0 (10-June 2004)
Central
TM
Semiconductor Corp.
P
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INA
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CQ223M CQ223N
1.0 AMP TRIAC 600 THRU 800 VOLTS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER
SYMBOL A B C D E F G H I J K L M
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3)
R0 (10-June 2004)
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