FCPF380N60

FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features 650 V @TJ = 150°C Max. RDS(on) = 380 mΩ Ultra low gate charge (typ. Qg = 30 nC) Low effective output capacitance (typ. Coss.eff = 95 pF) 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. Applications LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G TO-220 G D S GD S TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC 106 0.85 -55 to +150 300 -DC -AC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f >1 HZ) 10.2 6.4 30.6 211.6 2.3 ...